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FMG1G200US60L

Fairchild Semiconductor

FMG1G200US60L by Fairchild Semiconductor

FMG1G200US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.7V, IC of 200A, and Pmax of 695W. Ideal for MOTOR CONTROL applications due to its fast turn-on time (ton) of 330ns and built-in diode configuration. Operating at a max temperature of 150°C, it offers reliable performance in various industrial settings.

Median Price

$52.040

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Nova Conductors

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Overview

Experience superior performance and reliability with the FMG1G200US60L by Fairchild Semiconductor, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) offers unmatched quality and efficiency for motor control applications. With a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V, this N-CHANNEL transistor provides exceptional power dissipation of 695W. Its single configuration with built-in diode ensures easy installation and operation, while its fast turn-off and turn-on times optimize performance. Trust Fairchild Semiconductor to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and improves overall reliability of the IGBT.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance in controlling the speed and direction of motors.

Maximum VCEsat: 2.7 V

Low VCEsat reduces power dissipation and improves efficiency of the IGBT.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and efficient heat dissipation, ensuring reliability in operation.

Nominal Turn Off Time (toff): 410 ns

Fast turn off time enables quick switching and reduces power loss during operation.

Maximum Power Dissipation (Abs): 695 W

High power dissipation capability allows the IGBT to handle high current loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting in industrial applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the IGBT to withstand harsh environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating ensures the IGBT can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material offers high breakdown voltage and low conduction losses, making it a reliable choice for power electronics.

Maximum Gate-Emitter Voltage: 20 V

Safe maximum gate-emitter voltage protects the IGBT from damage during operation.

Maximum Collector Current (IC): 200 A

High maximum collector current rating allows the IGBT to handle large current flows without overheating.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and installation in electronic circuits.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and protection against voltage spikes, enhancing safety and reliability.

Nominal Turn On Time (ton): 330 ns

Fast turn on time ensures quick response and efficient operation in motor control applications.

Reference Standard: UL RECOGNIZED

UL recognition certifies the quality and safety of the IGBT, meeting industry standards and regulations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FMG1G200US60L attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

1

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

410 ns

Nominal Turn On Time (ton):

330 ns

Maximum VCEsat:

2.7 V

Trade Compliance

FMG1G200US60L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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