Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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STGWT40H60DLFB
STMicroelectronics
STGWT40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
80 A
600 V
20 V
175 Cel
NOT SPECIFIED
N-CHANNEL
283 W
Insulated Gate BIP Transistors
NO
STGWT40H65DFB
STGWT40H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 283W power dissipation, 650V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
650 V
STGWT60H65DFB
STGWT60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 375W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
375 W
STGWT60V60DF
STGWT60V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 243ns and high operating temperature range (-55 to 175 °C).
COLLECTOR
SINGLE WITH BUILT-IN DIODE
7 V
R-PSFM-T3
1
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
243 ns
80 ns
2.3 V
STGWT80H65DFB
STGWT80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 650V collector-emitter voltage, and 120A collector current. It operates up to 175 °C making it ideal for high-power applications in industries like automotive and renewable energy.
120 A
469 W
STGWT80V60DF
STGWT80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 175 °C max temp, 600V collector-emitter voltage. Ideal for high-power applications like motor drives and inverters due to its 120A collector current capacity.
MG12100W-XN2MM
Littelfuse
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 140 A; No. of Elements: 6; Nominal Turn Off Time (toff): 610 ns;
ISOLATED
140 A
1200 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.5 V
R-XUFM-X35
6
35
125 Cel
-40 Cel
UNSPECIFIED
UPPER
610 ns
340 ns
TIG056BF-1E
Onsemi
Onsemi's TIG056BF-1E is an N-CHANNEL IGBT with 30W power dissipation, 150 °C max temp, and 430V collector-emitter voltage. Ideal for high-power applications in industrial machinery and renewable energy systems due to its robust design and efficient performance.
430 V
5 V
33 V
e3
150 Cel
30 W
MATTE TIN
FGH15T120SMD_F155
Fairchild Semiconductor
Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.
30 A
7.5 V
25 V
TO-247AB
333 W
534 ns
74 ns
FGH40T120SMD_F155
FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.
555 W
NGTB30N120IHRWG
NGTB30N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 384W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
60 A
384 W
Tin (Sn)
NGTB40N120IHRWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;
NGTB40N60FLWG
NGTB40N60FLWG by Onsemi is an N-CHANNEL IGBT with 257W power dissipation, 600V collector-emitter voltage, and 80A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications requiring efficient switching capabilities.
257 W
STGFW20V60F
STGFW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor offers fast switching times of 49ns turn-on and 173ns turn-off, making it ideal for high-speed operations.
40 A
173 ns
49 ns
STGW20V60F
STGW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn on time of 49ns and turn off time of 173ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installation.
TO-247
STGWT20V60F
STGWT20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 49ns ton. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.
STGB40V60F
STGB40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V VCE, 80A IC, and 283W power dissipation. Ideal for power control applications, it has a toff of 241ns and ton of 73ns.
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
241 ns
73 ns
STGP40V60F
STGP40V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 241ns and high operating temperature range (-55 °C to 175°C).
TO-220AB
STGW20H60DF
STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.
167 W
259 ns
55.9 ns
2 V
STGWT20H60DF
STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.
STGB20V60F
STGB20V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 20A, and Ptot of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and turn-on time (ton) of 49ns. Suitable for surface mount with a max operating temperature of 175 °C.
20 A
2.2 V
STGB30V60F
STGB30V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 225ns, ton of 59ns, and can handle up to 260W power dissipation. Suitable for surface mount with operating temperature range from -55°C to 175°C.
260 W
225 ns
59 ns
STGFW30V60F
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;
58 W
STGP20V60F
STGP20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 20A IC, and 2.2V VCE. Ideal for POWER CONTROL applications, it has a toff of 173ns and ton of 49ns. The package style is FLANGE MOUNT with a max power dissipation of 167W at 175 °C operating temperature.
STGP30V60F
STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.
STGW30V60F
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Transistor Element Material: SILICON;
STGW60H65FB
STGW60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is used for POWER CONTROL applications, featuring a 375W power dissipation and -55 to 175°C operating temperature range.
230 ns
104 ns
STGWT30V60F
STGWT30V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Ptot of 260W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 225ns and high operating temperature range (-55 to 175 °C).
STGWT40H65FB
STGWT40H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 °C to 175°C).
202 ns
52 ns
STGWT60H65FB
STGWT60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is designed for POWER CONTROL applications, featuring a max power dissipation of 375W and operating temperature range from -55 °C to 175°C.
NGTB40N120FL2WG
NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
535 W
NGTB50N120FL2WG
NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
100 A
FD1200R17KE3KB2NOSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Case Connection: ISOLATED; Terminal Position: UPPER;
1700 A
1700 V
R-XUFM-X7
7
2100 ns
1050 ns
FD400R33KF2CKNOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 660 A; Nominal Turn On Time (ton): 480 ns; JESD-30 Code: R-XUFM-X7;
660 A
3300 V
1900 ns
480 ns
FD500R65KE3KNOSA1
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-XUFM-X9;
6500 V
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X9
9
UL APPROVED
8100 ns
1200 ns
FF225R17ME4B11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; No. of Terminals: 11; Package Style (Meter): FLANGE MOUNT;
340 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
1500 ns
350 ns
FZ1200R45KL3B5NOSA1
FZ1200R45KL3B5NOSA1 by Infineon is an N-CHANNEL IGBT with 4500V VCE, 7350ns toff, and 1050ns ton. Ideal for power control applications due to its complex configuration and three elements. Package style is flange mount with nine terminals in a rectangular shape.
4500 V
COMPLEX
7350 ns
DDB6U75N16W1RB11BOMA1
Infineon's DDB6U75N16W1RB11BOMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 69A max collector current, and 630ns turn off time. Ideal for power control applications, it features a single configuration with built-in diode, three-phase diode bridge, and thermistor in a rectangular package style.
69 A
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
630 ns
137 ns
DF1000R17IE4DB2BOSA1
N-Channel; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Transistor Application: POWER CONTROL;
1390 A
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
6.4 V
R-XUFM-X12
12
N-Channel
6250 W
1910 ns
830 ns
2.45 V
DF80R12W2H3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 49 ns;
50 A
R-XUFM-X22
22
190 W
600 ns
1.7 V
F1225R12KT4GBOSA1
F1225R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 12 elements, 1200V max collector-emitter voltage, and 55ns nominal turn on time. It is used for power control applications due to its complex configuration and UL recognized reference standard.
R-XUFM-X38
38
UL RECOGNIZED
470 ns
55 ns
F1235R12KT4GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: POWER CONTROL;
620 ns
210 ns
F3L100R07W2E3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 117 A; Terminal Form: UNSPECIFIED; Transistor Element Material: SILICON;
117 A
R-XUFM-X14
4
14
345 ns
95 ns
F3L150R07W2E3B11BOMA1
Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.
150 A
R-XUFM-X34
34
335 W
155 ns
1.9 V
F3L300R12ME4B22BOSA1
F3L300R12ME4B22BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, current of 450A, and turn off time of 650ns. Ideal for POWER CONTROL applications due to its built-in diode and thermistor features.
450 A
650 ns
290 ns
F3L300R12ME4B23BOSA1
F3L300R12ME4B23BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 450A. This IGBT is designed for power control applications with UL approval.
960 ns
F3L300R12MT4B22BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 270 ns;
270 ns
F3L300R12MT4B23BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Body Material: UNSPECIFIED; Case Connection: ISOLATED;
590 ns
280 ns
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