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FGH15T120SMD_F155

Fairchild Semiconductor

FGH15T120SMD_F155 by Fairchild Semiconductor

Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.

Median Price

$5.050

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Rochester

USA . 120 parts In-Stock

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$4.670

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$4.390

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$3.970

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$4.670

$4.390

$3.970

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Farnell

UK . 1,186 parts In-Stock

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$5.430

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$3.100

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$2.700

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$5.430

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$2.700

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Element14

Singapore . 1,196 parts In-Stock

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$7.790

100+ parts

$4.390

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$3.880

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$7.790

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Verical

USA . 7,377 parts In-Stock

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$2.345

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$2.256

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UK . 882 parts In-Stock

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Nova Conductors

Japan . 665 parts In-Stock

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$3.750

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$3.750

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Digiode

USA . 1,052 parts In-Stock

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$4.436

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$4.436

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Bristol Electronics

USA . 900 parts In-Stock

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$6.384

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$2.766

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$2.617

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900

$6.384

$2.766

$2.617

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Vyrian

USA . 8,959 parts In-Stock

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Dan-Mar Components

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Chip Stock

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Ampacity Inc.

Singapore . 5,172 parts In-Stock

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$1.990

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Corohmni

South Africa . 69 parts In-Stock

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$2.345

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Aranea Global

USA . 50 parts In-Stock

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$3.675

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$3.528

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$3.675

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Bastille Electronics

Australia . 120 parts In-Stock

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$3.750

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$3.562

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$3.384

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$3.338

120

$3.750

$3.562

$3.384

$3.338

Corphita

USA . 2,306 parts In-Stock

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$4.203

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AZTECH Wire

Italy . 737 parts In-Stock

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Perfect Parts

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TANS Electronics

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Kepictronics

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Kulean Microsystems

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Supply Digital

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SupplyDigital Components

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Problanco Electronics

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UHIMA Technologies

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Overview

Unleash the power of innovation with the FGH15T120SMD_F155 by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). Ideal for power control applications, this single N-channel transistor with built-in diode offers unmatched performance and efficiency. With a maximum collector-emitter voltage of 1200V and maximum power dissipation of 333W, this product is designed to meet your high-power needs while maintaining optimal functionality. Elevate your projects with the FGH15T120SMD_F155 and experience the difference that top-tier technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and faster switching speeds, making them suitable for high power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse voltage spikes, enhancing the overall performance of the IGBT.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers precise control over electrical power output.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used for power electronic components, providing easy mounting and integration into various systems.

Nominal Turn Off Time (toff): 534 ns

The low turn-off time enables fast switching speeds, reducing heat dissipation and improving efficiency in high-frequency applications.

Maximum Power Dissipation (Abs): 333 W

With a high power dissipation capability, this IGBT can handle large power loads without overheating, ensuring reliable operation under heavy loads.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for use in applications that require robust thermal performance, ensuring stability under various temperature conditions.

Maximum Collector-Emitter Voltage: 1200 V

The high voltage rating makes this IGBT suitable for high voltage applications, providing a wide range of voltage handling capabilities.

Maximum Gate-Emitter Voltage: 25 V

The gate-emitter voltage rating ensures safe operation and prevents damage to the IGBT during switching processes, enhancing overall reliability.

Maximum Collector Current (IC): 30 A

With a high collector current rating, this IGBT can handle large electrical currents, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 7.5 V

The gate-emitter threshold voltage determines the turn-on behavior of the IGBT, ensuring precise control over the switching process for optimal performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, ensuring reliable connections and efficient electrical performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it easy to integrate into various electronic systems.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation, ensuring the IGBT remains cool during operation for enhanced reliability.

Nominal Turn On Time (ton): 74 ns

The low turn-on time enables fast switching speeds, reducing power losses and improving efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH15T120SMD_F155 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

534 ns

Nominal Turn On Time (ton):

74 ns

Trade Compliance

FGH15T120SMD_F155 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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