Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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IGW40N65H5FKSA1
Infineon Technologies
IGW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 255W power dissipation, 650V collector-emitter voltage, and 74A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 4.8V. Ideal for high-power applications in various industries due to its robust performance and efficiency.
74 A
650 V
4.8 V
20 V
e3
175 Cel
N-CHANNEL
255 W
Insulated Gate BIP Transistors
NO
TIN
IGW50N65F5FKSA1
IGW50N65F5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -40 to 175 °C.
COLLECTOR
80 A
SINGLE
TO-247
R-PSFM-T3
1
3
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
305 W
THROUGH-HOLE
POWER CONTROL
SILICON
205 ns
35 ns
2.1 V
IGW50N65H5FKSA1
IGW50N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.
231 ns
IKA08N65F5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.2 W; Maximum Collector Current (IC): 10.8 A; JESD-30 Code: R-PSFM-T3;
ISOLATED
10.8 A
SINGLE WITH BUILT-IN DIODE
TO-220AB
31.2 W
163 ns
15 ns
IKA08N65H5XKSA1
IKA08N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 10.8A, and toff of 130ns. Ideal for POWER CONTROL applications due to its high power dissipation of 31.2W and max VCE of 650V. The transistor operates b/w -40°C to 175°C temperature range in a RECTANGULAR package style with THROUGH-HOLE terminals.
130 ns
16 ns
IKA15N65H5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33.3 W; Maximum Collector Current (IC): 14 A; Package Style (Meter): FLANGE MOUNT;
14 A
33.3 W
196 ns
24 ns
IKP08N65H5XKSA1
IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.
18 A
70 W
IKP15N65H5XKSA1
IKP15N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and Pmax of 105W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 196ns and high operating temperature up to 175°C. Package style is FLANGE MOUNT with COLLECTOR connection.
30 A
105 W
IKW40N65F5FKSA1
IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.
250 W
200 ns
34 ns
IKW40N65H5FKSA1
IKW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 74A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.
217 ns
32 ns
IKW50N65H5FKSA1
IKW50N65H5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 231ns and can handle up to 305W power dissipation.
IGC15T65QEX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; Terminal Form: NO LEAD; No. of Elements: 1;
5.6 V
R-XUUC-N2
2
UNSPECIFIED
UNCASED CHIP
NOT SPECIFIED
YES
NO LEAD
UPPER
2.32 V
IGC18T120T8QX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Package Style (Meter): UNCASED CHIP; Maximum VCEsat: 2.42 V;
1200 V
6.3 V
2.42 V
IGC27T120T8QX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
IGC39T65QEX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; No. of Terminals: 3; No. of Elements: 1;
R-XUUC-N3
2.22 V
IGC50T120T8RQX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N2; Transistor Application: POWER CONTROL; Maximum VCEsat: 2.42 V;
IGC54T65R3QEX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V; Maximum VCEsat: 2.22 V;
R-XUUC-N9
9
IGC99T120T8RQX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N5;
6.4 V
R-XUUC-N5
5
SIGC04T60EX1SA2
N-CHANNEL; Maximum Collector Current (IC): 6 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
6 A
600 V
6.5 V
150 Cel
SIGC06T60EX1SA2
N-CHANNEL; Maximum Collector Current (IC): 10 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
10 A
SIGC100T65R3EX1SA2
N-CHANNEL; Maximum Collector Current (IC): 200 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 175 Cel;
200 A
SIGC109T120R3LEX1SA2
N-CHANNEL; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
100 A
SIGC158T120R3LEX1SA2
N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
150 A
SIGC15T60EX1SA1
N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
SIGC19T60SEX1SA1
N-CHANNEL; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 5.6 V; Maximum Collector-Emitter Voltage: 600 V; Peak Reflow Temperature (C): NOT SPECIFIED;
40 A
SIGC28T65EX1SA1
N-CHANNEL; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V;
50 A
SIGC39T60EX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 1.85 V;
1.85 V
SIGC57T120R3LEX1SA3
N-CHANNEL; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
SIGC76T65R3EX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: NO LEAD; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel;
1.2 V
IHW15N120R3FKSA1
IHW15N120R3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn off time of 460ns, making it ideal for power control applications requiring high voltage and current handling capabilities. The transistor's single configuration with built-in diode and through-hole terminal form provide ease of use in various power control systems.
Not Qualified
460 ns
IHW20N120R3FKSA1
IHW20N120R3FKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 1200V and current of 40A. It has a turn off time of 538ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.
538 ns
IHW30N110R3FKSA1
IHW30N110R3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1100V and a max collector current of 60A. It has a nominal turn off time of 470ns, making it suitable for power control applications requiring high voltage and current handling capabilities. The package style is flange mount with through-hole terminals, ideal for power electronics designs where efficient heat dissipation is crucial.
60 A
1100 V
333 W
470 ns
IHW30N120R3FKSA1
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 60 A; Terminal Finish: TIN; Maximum Gate-Emitter Voltage: 20 V;
349 W
FF450R17IE4BOSA2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1800 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
1800 A
1700 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
1800 ns
650 ns
FF450R17ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 605 A; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
605 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
1300 ns
400 ns
FF450R17ME4BOSA1
FF450R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, max current of 600A, and turn off time of 1600ns. Ideal for power control applications due to its high operating temperature of 175°C and fast turn on time of 380ns.
600 A
1600 ns
380 ns
FF50R12RT4HOSA1
FF50R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and turn off time of 490ns, suitable for POWER CONTROL applications. The transistor's package style is FLANGE MOUNT with 5 terminals, operating up to 175°C.
R-XUFM-X5
490 ns
185 ns
FF600R06ME3BOSA1
FF600R06ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 600V, and a current rating of 700A. It features a nominal turn-off time of 805ns and turn-on time of 220ns, suitable for high-power applications in industries like automotive and renewable energy.
700 A
805 ns
220 ns
FF600R12IS4FBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Package Style (Meter): FLANGE MOUNT;
3700 W
630 ns
270 ns
3.75 V
FF600R12ME4BOSA1
Infineon's FF600R12ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 995A, and Pmax of 4050W. Ideal for POWER CONTROL applications due to its fast ton of 310ns and toff of 770ns at max VCE of 1200V.
995 A
4050 W
770 ns
310 ns
FF600R17KE3NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
900 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
10
1900 ns
900 ns
FF75R12RT4HOSA1
Infineon Technologies' FF75R12RT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 490ns turn off time. Ideal for POWER CONTROL applications, it has a max voltage of 1200V and operates up to 175°C. The transistor's SILICON material ensures efficient performance in various power systems.
FF800R12KL4CNOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1250 A; Nominal Turn Off Time (toff): 1210 ns; Qualification: Not Qualified;
1250 A
1210 ns
FF800R17KE3NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1150 A; Transistor Element Material: SILICON; No. of Elements: 2;
1150 A
FP100R06KE3BOSA1
FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
COMPLEX
R-XUFM-X24
24
820 ns
170 ns
FP100R07N3E4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 100 ns; Package Shape: RECTANGULAR; Transistor Application: POWER CONTROL;
R-XUFM-X43
43
370 ns
100 ns
FP10R06W1E3BOMA1
Infineon Technologies' FP10R06W1E3BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 600V, and max. current of 16A. Ideal for power control applications due to its fast turn on/off times (ton: 26ns, toff: 260ns) and operating temp up to 175°C in a rectangular package style.
16 A
R-XUFM-X23
23
260 ns
26 ns
FP10R12W1T4BOMA1
Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
20 A
500 ns
108 ns
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