Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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BSM15GD120DLCE3224BOSA1
Infineon Technologies
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
ISOLATED
35 A
1200 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X17
6
17
150 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
Not Qualified
NO
UPPER
SILICON
390 ns
130 ns
BSM10GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Elements: 6; Package Shape: RECTANGULAR;
15 A
460 ns
105 ns
BSM50GD120DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;
85 A
370 ns
110 ns
BSM50GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;
70 A
600 V
151 ns
52 ns
BSM35GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;
50 A
450 ns
120 ns
BSM75GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 95 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
95 A
205 ns
90 ns
DDB6U100N16RRBOSA1
Infineon's DDB6U100N16RRBOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 150°C max operating temperature. Ideal for power control applications due to its single configuration with built-in diode and three-phase diode bridge.
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
1
NOT SPECIFIED
POWER CONTROL
DDB6U84N16RRBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
BSM30GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 39 ns;
40 A
103 ns
39 ns
BSM100GB120DLCKHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 205 A; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn Off Time (toff): 480 ns;
205 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
480 ns
FP25R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
COMPLEX
R-XUFM-X24
24
FS35R12KE3GBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-XUFM-X28; Terminal Form: UNSPECIFIED;
55 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X28
28
610 ns
140 ns
FS225R12KE3BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 325 A; JESD-30 Code: R-XUFM-X29; Nominal Turn On Time (ton): 400 ns;
325 A
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X29
29
810 ns
400 ns
FS25R12KT3BOSA1
FS25R12KT3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a toff of 610 ns, ton of 140 ns, and can handle up to 40 A collector current. Ideal for applications requiring high voltage (1200 V) and temperature (150°C) operation such as power supplies and motor drives.
BSM100GD120DLCBOSA1
Infineon's BSM100GD120DLCBOSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 160A, and turn-off time of 480ns. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
160 A
R-XUFM-X39
39
FZ1200R33KL2CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2300 A; Package Body Material: UNSPECIFIED;
2300 A
3300 V
20 V
R-XUFM-X9
3
9
14500 W
Insulated Gate BIP Transistors
4250 ns
1700 ns
3.65 V
BSM300GA170DLCHOSA1
Infineon's BSM300GA170DLCHOSA1 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 600A max collector current. It features a single configuration with built-in diode, 930ns turn off time, and 200ns turn on time. Ideal for high-power applications requiring fast switching capabilities in isolated case connections.
600 A
1700 V
SINGLE WITH BUILT-IN DIODE
R-XUFM-X5
5
930 ns
200 ns
BSM200GA170DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
400 A
SIGC61T60NCX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
75 A
SINGLE
R-XUUC-N4
4
UNCASED CHIP
YES
NO LEAD
SIGC14T60NCX1SA7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Nominal Turn On Time (ton): 28 ns; Maximum Collector-Emitter Voltage: 600 V;
20 A
S-XUUC-N2
SQUARE
135 ns
28 ns
SIGC11T60NCX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 130 ns; Package Body Material: UNSPECIFIED;
10 A
SIGC121T60NR2CX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Nominal Turn Off Time (toff): 260 ns; Package Style (Meter): UNCASED CHIP;
150 A
S-XUUC-N
260 ns
155 ns
SIGC156T60NR2CX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Package Shape: SQUARE;
200 A
S-XUUC-N11
11
326 ns
229 ns
SIGC25T60SNCX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
41 A
R-XUUC-N3
391 ns
78 ns
SIGC14T60SNCX1SA5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Form: NO LEAD; Maximum Operating Temperature: 150 Cel;
315 ns
54 ns
SIGC18T60SNCX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Terminal Form: NO LEAD; Qualification: Not Qualified;
313 ns
66 ns
SIGC81T60SNCX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Nominal Turn Off Time (toff): 540 ns; Nominal Turn On Time (ton): 115 ns;
100 A
S-XUUC-N10
10
540 ns
115 ns
SIGC42T60SNCX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; No. of Terminals: 4; Transistor Application: POWER CONTROL;
S-XUUC-N4
95 ns
SIGC11T60SNCX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; JESD-30 Code: S-XUUC-N2; Transistor Application: POWER CONTROL;
224 ns
40 ns
SIGC12T60SNCX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;
329 ns
50 ns
SIGC07T60SNCX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; JESD-30 Code: S-XUUC-N2; No. of Terminals: 2;
6 A
318 ns
41 ns
BSM75GD120DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 125 A; Nominal Turn On Time (ton): 110 ns; Package Style (Meter): FLANGE MOUNT;
125 A
e3
MATTE TIN
420 ns
FS75R12KS4BOSA1
Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
190 ns
BSM50GP120BOSA1
Infineon Technologies' BSM50GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 430ns and a max operating temperature of 150°C. Ideal for applications requiring high current handling capabilities in complex configurations.
80 A
R-XUFM-X35
35
430 ns
BSM35GP120GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1200 V;
45 A
BSM25GP120BOSA1
Infineon's BSM25GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 45A max collector current. It has a toff of 420ns and ton of 90ns, suitable for applications requiring high power switching in complex configurations. The package style is flange mount with isolated case connection, ideal for industrial settings with temperatures up to 150°C.
FP15R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Qualification: Not Qualified; JESD-30 Code: R-XUFM-X24;
30 A
BSM35GP120BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Terminal Position: UPPER; Nominal Turn On Time (ton): 105 ns;
FD300R12KE3HOSA1
Infineon's FD300R12KE3HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 480A max collector current, and 830ns turn off time. It is a single configuration with built-in diode, suitable for high-power applications like industrial motor drives and renewable energy systems.
480 A
830 ns
FP50R12KT3BOSA1
Infineon's FP50R12KT3BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 75A max collector current, and 610ns nominal turn off time. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
FP50R12KS4CBOSA1
Infineon Technologies' FP50R12KS4CBOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 70A, and max. collector-emitter voltage of 1200V. It has a nominal turn on time of 110ns and turn off time of 460ns. Ideal for high-power applications requiring fast switching capabilities in industrial settings.
DF200R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 295 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
295 A
FP40R12KT3GBOSA1
FP40R12KT3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn off time of 610ns and a max collector current of 55A. This complex configuration transistor is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
FP15R12KT3BOSA1
FP15R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 25A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
25 A
DF300R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 480 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FS75R17KE3BOSA1
FS75R17KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 1100 ns and ton of 450 ns, ideal for high-power applications. With a max voltage of 1700 V and current of 130 A, it's suitable for industrial power systems.
130 A
1100 ns
FS100R17KE3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 145 A; Case Connection: ISOLATED; No. of Elements: 6;
145 A
FF800R12KE3NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;
1200 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
1140 ns
880 ns
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