Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon's BSM300GA170DLCHOSA1 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 600A max collector current. It features a single configuration with built-in diode, 930ns turn off time, and 200ns turn on time. Ideal for high-power applications requiring fast switching capabilities in isolated case connections.
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N-CHANNEL IGBTs have lower on-state voltage drop and higher efficiency compared to P-CHANNEL types, making it a good choice for high power applications.
Having a built-in diode allows for easier circuit design and helps in controlling inductive loads efficiently.
With a high maximum collector current rating, this IGBT can handle large amounts of current, making it suitable for high power applications.
The high maximum collector-emitter voltage rating allows for its usage in high voltage applications, ensuring safety and reliability.
The low turn off time ensures fast switching speed, reducing power losses and improving efficiency.
The low turn on time allows for quick activation, making it suitable for applications where fast switching is required.
Insulated Gate Bipolar Transistors (IGBT) BSM300GA170DLCHOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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BSM300GA170DLCHOSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
NDT2955
Onsemi
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
DRV5053VAQLPG
Texas Instruments
Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
LM317T/NOPB
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
1N4148WS
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ULN2003ADR
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
M39029/58-360
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
261
Deltrol Controls
Other Relays;
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Forward International Electronics
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;
IXXX200N60C3
Littelfuse
The Littelfuse IXXX200N60C3 is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 340A. Ideal for POWER CONTROL applications, it has a toff of 240ns and can handle up to 1630W power dissipation. Operating temperature ranges from -55°C to 175°C, making it suitable for various industrial uses.
IRG4PH50SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 57 A; Maximum Gate-Emitter Threshold Voltage: 6 V;
FGH50N6S2D
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;
IRG4BC40UPBF
IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
IRG4PH50SPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 57A. It has a Nominal Turn Off Time of 2170ns and Nominal Turn On Time of 62ns, making it suitable for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
IKA10N65ET6XKSA2
IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.
STGIPL14K60
STMicroelectronics
STGIPL14K60 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 2.5V max, and 14A IC. Ideal for MOTOR CONTROL applications, it has a turn-off time of 425ns and operates up to 125°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with 38 terminals in THROUGH-HOLE form.
HGT1S10N120BNS
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL; Package Style (Meter): SMALL OUTLINE;
HGTG18N120BND
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 18 A; Maximum Gate-Emitter Voltage: 20 V;
IKQ75N120CH3XKSA1
IKQ75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 454ns and turn-on time of 81ns, this transistor operates from -40°C temperature range.
FF300R12ME4BOSA1
FF300R12ME4BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 450A, and turn off time of 720ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
FB10R06KL4GB1
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;
FF450R17ME4B11BOSA1
Infineon Technologies' FF450R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.3V and IC of 600A. Operates at -40 to 150 °C, featuring a max VCE of 1700V and Pmax of 2500W in a rectangular package style.
IKW30N60H3
IKW30N60H3 by Infineon is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 262ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temp of 175°C in a RECTANGULAR package style.
APT70GR120J
Microchip Technology
Microchip Technology's APT70GR120J is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 112A max collector current. Ideal for motor control applications, it features a built-in diode, 394ns turn-off time, and 543W power dissipation capability.
IXLF19N250A
IXLF19N250A by Littelfuse is an N-CHANNEL IGBT with 2500V VCE, 19A IC, and 150W Ptot. Ideal for power control applications, it has a turn-off time of 850ns and operates up to 150°C. Recognized by UL, this transistor is in a rectangular package with through-hole terminals.
6PS18012E4FG38393NWSA1
N-Channel; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V; Minimum Operating Temperature: -25 Cel;
FP15R06W1E3BOMA1
FP15R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 23 terminals, and a max collector current of 15 A. It has a nominal turn-off time of 260 ns and a max operating temperature of 175°C. This complex transistor is commonly used in power control applications due to its silicon element material and isolated case connection.
IHW20N135R5XKSA1
IHW20N135R5XKSA1 by Infineon is an N-CHANNEL IGBT with 1350V VCE, 40A IC, and 288W power dissipation. Ideal for power control applications, it features a built-in diode, 450ns turn-off time, and operates b/w -40 to 175°C.
ISL9V3036S3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Peak Reflow Temperature (C): 260;
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BSM300GB60DLC
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 375 A; Qualification: Not Qualified;
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 375 A; Maximum Collector-Emitter Voltage: 600 V;
BSM300GAL120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 625 A; Terminal Position: UPPER; Package Shape: RECTANGULAR;
BSM300GA120DLCS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2270 W; Maximum Collector Current (IC): 570 A; No. of Elements: 1;
BSM300GA120DN2SHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 430 A; No. of Elements: 1; Package Body Material: UNSPECIFIED;
BSM300GA170DN2S
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 440 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Operating Temperature: 125 Cel; No. of Elements: 1;
BSM300GA120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 430 A; Nominal Turn On Time (ton): 210 ns; No. of Terminals: 4;
BSM300GAR120DLC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 625 A; Package Style (Meter): FLANGE MOUNT;
BSM300GA120D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-30 Code: R-PUFM-X4;
BSM300GA160D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 3.7 V; No. of Elements: 1; Maximum Collector-Emitter Voltage: 1600 V;
BSM300GA120DLCSHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 570 A; Terminal Position: UPPER; Package Shape: RECTANGULAR;
BSM300GA170DLC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X5;
BSM300GA170DN2E3166
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 440 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Voltage: 20 V;
BSM300GA120DN2E3166
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 430 A; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1200 V;
BSM300GAL120DLC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 625 A; Maximum VCEsat: 2.6 V;
BSM300GA120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 570 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUFM-X5;
BSM300GA120DN2S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 430 A; Maximum Collector-Emitter Voltage: 1200 V;
BSM300GA100D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
BSM300GA120DLC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2270 W; Maximum Collector Current (IC): 570 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X4;
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