Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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STGD3NC120H-1
STMicroelectronics
STGD3NC120H-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 16A IC, and 105W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 2.8V and fast turn-off time of 342ns. Package style is IN-LINE with through-hole terminals.
COLLECTOR
16 A
1200 V
SINGLE
5 V
20 V
TO-251
R-PSIP-T3
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
NOT SPECIFIED
N-CHANNEL
105 W
NO
THROUGH-HOLE
POWER CONTROL
SILICON
342 ns
18.5 ns
2.8 V
STGFW30NC60V
STMicroelectronics' STGFW30NC60V is an N-CHANNEL IGBT with 600V VCE, 36A IC, and 80W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
36 A
600 V
5.75 V
80 W
Insulated Gate BIP Transistors
STGW60H65DF
STGW60H65DF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It is used for power control applications due to its fast turn-off time of 247ns and turn-on time of 113ns. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
120 A
650 V
SINGLE WITH BUILT-IN DIODE
TO-247
R-PSFM-T3
e3
FLANGE MOUNT
360 W
Matte Tin (Sn)
247 ns
113 ns
NGTG30N60FLWG
Onsemi
NGTG30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
60 A
6.5 V
250 W
Tin (Sn)
STGF17NC60SD
STGF17NC60SD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 17A IC, and 32W Pd. It operates up to 150 °C making it ideal for power electronics applications requiring high voltage and current handling capabilities.
17 A
6.2 V
32 W
Matte Tin (Sn) - annealed
DF160R12W2H3_B11
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Terminal Position: UPPER; Case Connection: ISOLATED;
ISOLATED
50 A
COMPLEX
R-XUFM-X19
4
19
UNSPECIFIED
UL APPROVED
UPPER
375 ns
49 ns
DF80R12W2H3_B11
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
R-XUFM-X22
2
22
-40 Cel
N-Channel
190 W
600 ns
1.7 V
IGC70T120T8RQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
6.3 V
R-XUUC-N5
5
175 Cel
UNCASED CHIP
YES
NO LEAD
2.42 V
STGB20H60DF
STGB20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 40A, and Ptot of 167W. Ideal for power control applications, it has a toff of 259ns and ton of 55.9ns. Suitable for surface mount with a max VCE of 600V and operating temperature range from -55 °C to +175°C.
40 A
7 V
TO-263AB
R-PSSO-G2
SMALL OUTLINE
167 W
GULL WING
259 ns
55.9 ns
2 V
STGF30H60DF
STGF30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Pmax of 37W. Ideal for power control applications due to its fast turn-off time (toff) of 234ns and high collector-emitter voltage rating of 600V. Package style: FLANGE MOUNT, suitable for isolated case connections in various industrial settings.
TO-220AB
37 W
234 ns
64 ns
2.4 V
STGP35HF60W
STMicroelectronics' STGP35HF60W is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W power dissipation. It operates up to 150°C and has a gate-emitter threshold voltage of 5.75V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
200 W
MATTE TIN
STGW25H120DF2
STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
375 W
339 ns
41 ns
2.6 V
IGW60T120FKSA1
Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.
100 A
TO-247AD
TIN
730 ns
95 ns
NGTB30N60FLWG
NGTB30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at up to 150 °C operating temperature.
STGW30H60DF
STGW30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 60A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and can dissipate up to 260W at temperatures ranging from -40 to 175 °C.
260 W
STGW40V60DLF
STGW40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175 °C and is ideal for high-power applications like motor drives and inverters.
80 A
283 W
STGW60H60DLFB
STGW60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 375W Pd. It is used for POWER CONTROL applications due to its low VCEsat of 2V and fast turn-on time of 301ns. The device operates in a temperature range from -55 °C to 175°C and comes in a FLANGE MOUNT package style.
301 ns
STGWT40V60DF
STGWT40V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 283W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 241ns and high operating temperature range (-55 to 175 °C).
241 ns
73 ns
2.3 V
STGWT40V60DLF
STGWT40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 283W Pd. It operates up to 175 °C making it ideal for high-power applications in industries like automotive, renewable energy, and industrial automation.
STGWT60H60DLFB
STGWT60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 375W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style. Operating temperature ranges from -55 °C to 175°C.
NGTB50N60FWG
NGTB50N60FWG by Onsemi is an N-CHANNEL IGBT with 223W power dissipation, 600V collector-emitter voltage, and 100A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
223 W
NGTG30N60FWG
NGTG30N60FWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 167W Pd. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
NGTB20N120IHRWG
NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
384 W
VS-GB90DA120U
Vishay Intertechnology
VS-GB90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 149A max collector current, and 862W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.
149 A
6 V
R-PUFM-X4
862 W
UL RECOGNIZED
NICKEL
420 ns
293 ns
STGB20V60DF
STGB20V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 20V max gate-emitter voltage. It operates at a max temperature of 175 °C, suitable for surface mount applications in various electronic devices.
245
STGP20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
STGP30V60DF
STGP30V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 225ns turn-off time. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.
225 ns
59 ns
BSM35GB120DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Terminal Form: UNSPECIFIED; No. of Terminals: 7;
35 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
Not Qualified
450 ns
120 ns
BSM75GAR120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
75 A
BSM75GB120DN2HOSA1
Infineon's BSM75GB120DN2HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max Collector-Emitter Voltage of 1200V and Max Collector Current of 75A, it offers fast switching with Nominal Turn Off Time of 520ns and Nominal Turn On Time of 100ns. The package style is FLANGE MOUNT with 7 terminals in an ISOLATED case connection.
520 ns
100 ns
FZ1200R12KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Terminal Position: UPPER; No. of Terminals: 7;
1200 A
1050 ns
700 ns
FZ400R12KE3B1HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 650 A; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT;
650 A
R-XUFM-X5
830 ns
400 ns
FS25R12KE3GBOSA1
FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X28
6
28
610 ns
140 ns
BSM75GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 103 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 100 ns;
103 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X39
39
FS75R12KE3BOSA1
FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
105 A
340 ns
FS50R12KE3BOSA1
FS50R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 610 ns and ton of 140 ns, suitable for high-power applications. With a Vce of 1200V and IC of 75A, it operates at up to 150°C making it ideal for industrial power systems.
BSM100GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
130 A
180 ns
36 ns
DDB2U30N08VRBOMA1
DDB2U30N08VRBOMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 145ns nominal turn off time. It is used in single phase diode bridge applications due to its built-in diode and thermistor, featuring a rectangular package style for flange mount installation at temperatures up to 150°C.
25 A
SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X12
12
145 ns
38 ns
DDB6U30N08VRBOMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 26 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: UNSPECIFIED;
26 A
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X9
9
DDB6U134N16RRBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
70 A
BSM15GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Nominal Turn Off Time (toff): 470 ns; Terminal Position: UPPER;
R-XUFM-X17
17
470 ns
BSM15GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
BSM50GD120DN2BOSA1
Infineon's BSM50GD120DN2BOSA1 is a N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 72A, and turn off time of 450ns. Ideal for high-power applications like motor drives and inverters due to its fast switching capabilities.
72 A
BSM25GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Terminals: 17; Maximum Operating Temperature: 150 Cel;
BSM25GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
FS200R06KE3BOSA1
FS200R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a toff of 450 ns, ton of 210 ns, and can handle up to 200 A collector current. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
200 A
R-XUFM-X35
35
210 ns
FS50R06KE3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Form: UNSPECIFIED;
265 ns
43 ns
BSM35GD120DLCE3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; No. of Elements: 6;
370 ns
110 ns
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