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DDB2U30N08VRBOMA1

Infineon Technologies

DDB2U30N08VRBOMA1 by Infineon Technologies

DDB2U30N08VRBOMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 145ns nominal turn off time. It is used in single phase diode bridge applications due to its built-in diode and thermistor, featuring a rectangular package style for flange mount installation at temperatures up to 150°C.

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3

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1k+

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Vyrian

USA . 2,006 parts In-Stock

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Digiode

USA . 672 parts In-Stock

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Nova Conductors

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Modulus Dynamics

Lithuania . 3,277 parts In-Stock

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$1.084

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$1.041

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$0.997

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Corohmni

South Africa . 17 parts In-Stock

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AZTECH Wire

Italy . 428 parts In-Stock

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Ampacity Inc.

Singapore . 1,368 parts In-Stock

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$35.050

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QUARKTWIN TECHNOLOGY LTD

USA . 11,792 parts In-Stock

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Microchip USA

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Argo Parts USA

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Continental Prestige Electronics

USA . 3,415 parts In-Stock

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Aranea Global

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Corphita

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Overview

Enhance your power electronics with the DDB2U30N08VRBOMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors for a wide range of applications. With a single phase diode bridge and built-in thermistor, this N-channel transistor offers superior performance and reliability. Experience faster turn off and turn on times, combined with a high voltage tolerance of 600V and a maximum collector current of 25A. Trust Infineon to provide cutting-edge technology that meets your power needs efficiently and effectively.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer better performance and efficiency compared to P-channel IGBTs, making this product a good choice for high power applications.

Configuration: SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

The built-in diode, diode bridge, and thermistor allow for easy integration and protection in various electrical circuits, making this product versatile and convenient.

Nominal Turn Off Time (toff): 145 ns

The fast turn-off time of 145 ns ensures efficient switching and reduces power losses, making this product suitable for applications where high speed is required.

No. of Terminals: 12

Having 12 terminals provides flexibility in connecting the IGBT to other components or circuits, allowing for customization and efficient design implementation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT can withstand high temperatures and perform reliably in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V allows this IGBT to handle high voltage applications with ease, making it suitable for a wide range of power systems.

Transistor Element Material: SILICON

IGBTs with silicon as the transistor element material offer high performance, durability, and reliability, making this product a reliable choice for various applications.

Maximum Collector Current (IC): 25 A

With a maximum collector current of 25 A, this IGBT can handle high current loads efficiently, making it suitable for power electronics applications.

Terminal Position: UPPER

The upper terminal position allows for easy access and connection in circuits, simplifying the installation process and ensuring ease of use.

Case Connection: ISOLATED

An isolated case connection ensures enhanced safety and protection from electrical hazards, making this IGBT a reliable and secure choice for various applications.

Nominal Turn On Time (ton): 38 ns

The fast turn-on time of 38 ns ensures quick response and efficient operation, making this IGBT suitable for applications requiring rapid switching and high performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) DDB2U30N08VRBOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-XUFM-X12

No. of Elements:

1

No. of Terminals:

12

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

145 ns

Nominal Turn On Time (ton):

38 ns

Trade Compliance

DDB2U30N08VRBOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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