Loading...

VS-GB90DA120U

Vishay Intertechnology

VS-GB90DA120U by Vishay Intertechnology

VS-GB90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 149A max collector current, and 862W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.

Median Price

$76.433

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 143 parts In-Stock

1+ parts

$76.433

100+ parts

-

1k+ parts

-

10k+ parts

-

143

$76.433

-

-

-

Vyrian

USA . 2,351 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,351

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 190 parts In-Stock

1+ parts

$0.580

100+ parts

-

1k+ parts

-

10k+ parts

-

190

$0.580

-

-

-

Aztec Data Supply Inc.

USA . 3,575 parts In-Stock

1+ parts

$0.881

100+ parts

-

1k+ parts

-

10k+ parts

-

3,575

$0.881

-

-

-

AZTECH Wire

Italy . 607 parts In-Stock

1+ parts

$8.140

100+ parts

-

1k+ parts

-

10k+ parts

-

607

$8.140

-

-

-

Ampacity Inc.

Singapore . 262 parts In-Stock

1+ parts

$16.050

100+ parts

-

1k+ parts

-

10k+ parts

-

262

$16.050

-

-

-

Microchip USA

USA . 280 parts In-Stock

1+ parts

$844.739

100+ parts

-

1k+ parts

-

10k+ parts

-

280

$844.739

-

-

-

Continental Prestige Electronics

USA . 4,922 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,922

-

-

-

-

Argo Parts USA

USA . 1,002 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,002

-

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Unlock the power of efficient power control with the Vishay Intertechnology VS-GB90DA120U Insulated Gate Bipolar Transistor. Manufactured by Vishay, a trusted leader in electronic components, this N-CHANNEL transistor offers a single configuration with a built-in diode for seamless integration. Ideal for applications requiring high power dissipation, this transistor boasts a maximum collector-emitter voltage of 1200V and a maximum collector current of 149A. With a fast turn-off time of 420ns and a reliable UL recognized reference standard, the VS-GB90DA120U delivers exceptional performance and value for your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring durability and reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with built-in diode for easier integration and power control applications.

Maximum Power Dissipation (Abs): 862 W

High power dissipation capability allows for handling of large power loads efficiently.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 1200 V

Can handle high voltage levels, making it suitable for power control applications.

Maximum Collector Current (IC): 149 A

Capable of handling high collector currents, providing flexibility for various power control needs.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-GB90DA120U attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

420 ns

Nominal Turn On Time (ton):

293 ns

Trade Compliance

VS-GB90DA120U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2