Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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SGP30N60HSXKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
COLLECTOR
41 A
600 V
SINGLE
TO-220AB
R-PSFM-T3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
Not Qualified
NO
THROUGH-HOLE
POWER CONTROL
SILICON
301 ns
39 ns
SGW30N60HSFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
TO-247AC
SGW25N120FKSA1
Infineon's SGW25N120FKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 46A max collector current. Ideal for power control applications, it has a single configuration, 862ns turn-off time, and operates up to 150°C.
46 A
1200 V
e3
TIN
862 ns
86 ns
SGW50N60HSFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Transistor Application: MOTOR CONTROL; Case Connection: COLLECTOR;
100 A
TO-247AD
MOTOR CONTROL
370 ns
79 ns
IHW40N60RFFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON; No. of Terminals: 3;
80 A
SINGLE WITH BUILT-IN DIODE
TO-247
175 Cel
228 ns
IKW15N120H3FKSA1
IKW15N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures durability in high-temp environments up to 175°C.
30 A
49 ns
BSM50GD170DLBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; JESD-30 Code: R-XUFM-X21; Package Style (Meter): FLANGE MOUNT;
ISOLATED
1700 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X21
6
21
UNSPECIFIED
UPPER
930 ns
200 ns
FD600R12KF4NOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X5; Package Body Material: UNSPECIFIED;
600 A
R-XUFM-X5
5
1150 ns
800 ns
FF600R12KF4NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: RECTANGULAR;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
2
10
FZ800R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED;
800 A
1600 V
COMPLEX
GENERAL PURPOSE
1600 ns
1000 ns
FD400R33KF2CNOSA1
Infineon's FD400R33KF2CNOSA1 is an N-CHANNEL IGBT with 3300V VCE, 660A IC, and 4800W power dissipation. Ideal for power control applications due to its 1900ns turn-off time and 480ns turn-on time. Package style is flange mount with isolated case connection.
660 A
3300 V
20 V
4800 W
Insulated Gate BIP Transistors
1900 ns
480 ns
4.25 V
FD800R33KF2CNOSA1
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED;
1300 A
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
IHW30N160R2FKSA1
IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
60 A
675 ns
IGW40N60H3FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T3; Nominal Turn On Time (ton): 48 ns;
249 ns
48 ns
FS200R12KT4RBOSA1
Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.
280 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
UL RECOGNIZED
600 ns
190 ns
IGA30N60H3XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; No. of Elements: 1; Nominal Turn On Time (ton): 40 ns;
18 A
262 ns
40 ns
IGP20N60H3XKSA1
IGP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT transistor with a max voltage of 600V and max current of 40A. It has a turn on time of 31ns and turn off time of 241ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 175°C.
40 A
241 ns
31 ns
IGW20N60H3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Package Body Material: PLASTIC/EPOXY; Nominal Turn Off Time (toff): 241 ns;
37 ns
IGW30N60H3FKSA1
IGW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The transistor's package style is flange mount with through-hole terminals, suitable for high-power applications in industrial settings.
50 ns
IGW50N60H3FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; JEDEC-95 Code: TO-247;
297 ns
54 ns
IKP20N60H3XKSA1
IKP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 31ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures easy installation in various systems.
IKW30N60H3FKSA1
IKW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It is designed for power control applications, offering a nominal turn-off time of 262ns and a nominal turn-on time of 50ns.
IKW50N60H3FKSA1
IKW50N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 297ns toff. Ideal for power control applications due to its single configuration with built-in diode. Operates at a max temperature of 175°C in a rectangular package style.
IHY20N135R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
1350 V
505 ns
FS200R07A1E3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: UPPER;
250 A
650 V
R-XUFM-X13
13
490 ns
120 ns
FS400R07A1E3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
500 A
580 ns
IHW20N135R3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Maximum Collector Current (IC): 40 A; Terminal Position: SINGLE;
6.4 V
25 V
310 W
385 ns
IHW40N60RFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-247AD;
264 ns
FF600R17ME4BOSA1
Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.
950 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
980 ns
320 ns
IGW40T120FKSA1
IGW40T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 75A. It is designed for power control applications and has a nominal turn-off time of 700ns.
75 A
700 ns
92 ns
IGW75N60H3FKSA1
Infineon Technologies' IGW75N60H3FKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 140A max collector current. Ideal for power control applications, it features a plastic/epoxy package body, single configuration, and through-hole terminal form.
140 A
IKW75N60H3FKSA1
IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
FS600R07A2E3BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 530 A; JESD-30 Code: R-XUFM-X33;
530 A
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.5 V
R-XUFM-X33
33
-40 Cel
1250 W
540 ns
1.6 V
IKU06N60RBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;
12 A
5.7 V
TO-251
R-PSIP-T3
IN-LINE
100 W
335 ns
22 ns
IGC07T120T8LX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XUUC-N2;
6.3 V
R-XUUC-N2
UNCASED CHIP
YES
NO LEAD
2.02 V
IKW60N60H3FKSA1
IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
314 ns
64 ns
IGW60N60H3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON; Case Connection: COLLECTOR;
IHW40N120R3FKSA1
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 429 W; Maximum Collector Current (IC): 80 A; Terminal Finish: TIN; Maximum Gate-Emitter Voltage: 20 V;
429 W
IKB03N120H2ATMA1
Infineon's IKB03N120H2ATMA1 is an N-CHANNEL IGBT with 1200V VCE, 9.6A IC, and 403ns toff. Ideal for power control applications, it features a built-in diode in a small outline package for surface mount assembly.
HIGH SPEED
9.6 A
R-PSSO-G3
SMALL OUTLINE
GULL WING
403 ns
16.1 ns
IHW30N135R3FKSA1
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Gate-Emitter Voltage: 20 V;
349 W
IHW40N135R3FKSA1
IGW100N60H3FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 140 A; Package Body Material: PLASTIC/EPOXY;
714 W
333 ns
72 ns
2.3 V
FP15R12W2T4BOMA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
15 A
145 W
2.25 V
FS100R17N3E4BOSA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
600 W
FS150R17N3E4BOSA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 835 W; Maximum Collector Current (IC): 150 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum VCEsat: 2.3 V; No. of Elements: 1;
150 A
835 W
FZ250R65KE3NPSA1
Infineon's FZ250R65KE3NPSA1 IGBT offers 6500V VCE, 250A IC, and 4800W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
6500 V
3.4 V
FS400R12A2T4BOSA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 1.85 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
400 A
1500 W
1.85 V
IGW40N65F5FKSA1
Infineon's IGW40N65F5FKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications in industrial machinery, renewable energy systems, and electric vehicles due to its robust design and high operating temperature of 175°C.
74 A
4.8 V
255 W
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