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IXSK35N120AU1

IXYS Corporation

IXSK35N120AU1 by IXYS Corporation

IXYS Corporation's IXSK35N120AU1 is an N-CHANNEL IGBT with 1200V VCE, 70A IC, and 4V VCEsat. Ideal for MOTOR CONTROL applications, it has a built-in diode, 1100ns toff, and can handle up to 300W power dissipation.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 150 parts In-Stock

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150

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LWI Electronics Inc

India . 4 parts In-Stock

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AZTECH Wire

Italy . 840 parts In-Stock

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$14.090

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840

$14.090

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Argo Parts USA

USA . 5,588 parts In-Stock

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5,588

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Continental Prestige Electronics

USA . 2,669 parts In-Stock

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2,669

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Upgrade your motor control systems with the IXSK35N120AU1 from IXYS Corporation. This N-CHANNEL Insulated Gate Bipolar Transistor (IGBT) offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications. With a maximum collector-emitter voltage of 1200V and a maximum power dissipation of 300W, this transistor provides exceptional performance and efficiency. Say goodbye to power fluctuations and hello to seamless operation with the IXSK35N120AU1. Choose IXYS Corporation for top-notch products that deliver results.

Feature Benefit Bullets

Package Body Material

The use of plastic/epoxy as the package body material makes the IGBT lightweight and durable, ideal for applications where weight and size constraints are important.

Polarity or Channel Type

N-channel IGBTs typically have lower conduction losses and faster switching speeds compared to P-channel IGBTs, making them suitable for high efficiency motor control applications.

Configuration

The built-in diode simplifies the circuit design and protects against reverse current flow, enhancing the reliability and performance of the IGBT.

Transistor Application

Designed specifically for motor control applications, this IGBT is optimized for high power handling and efficiency, making it a reliable choice for controlling motors.

Maximum VCEsat

The lower VCEsat value indicates reduced power losses and improved efficiency in the ON state, making this IGBT suitable for high-performance applications where energy efficiency is critical.

Maximum Collector-Emitter Voltage

The high collector-emitter voltage rating allows the IGBT to handle high voltage applications, making it versatile for a wide range of motor control systems.

Maximum Collector Current (IC)

The high collector current rating enables the IGBT to handle high power loads, making it suitable for motor control applications that require high current capability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXSK35N120AU1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

300 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1100 ns

Nominal Turn On Time (ton):

230 ns

Maximum VCEsat:

4 V

Trade Compliance

IXSK35N120AU1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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