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STGBL6NC60DT4

STMicroelectronics

STGBL6NC60DT4 by STMicroelectronics

STGBL6NC60DT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for applications in energy conversion and motor drives.

Median Price

$0.723

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.723

10k+ parts

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416

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-

$0.723

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,232 parts In-Stock

1+ parts

$1.634

100+ parts

-

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-

10k+ parts

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2,232

$1.634

-

-

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Vyrian

USA . 4,122 parts In-Stock

1+ parts

-

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4,122

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Anansix

USA . 2,624 parts In-Stock

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-

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2,624

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Bristol Electronics

USA . 503 parts In-Stock

1+ parts

-

100+ parts

$0.715

1k+ parts

$0.534

10k+ parts

-

503

-

$0.715

$0.534

-

Dan-Mar Components

USA . 503 parts In-Stock

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503

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Distributors (Availability)

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.605

100+ parts

$0.551

1k+ parts

$0.496

10k+ parts

-

20

$0.605

$0.551

$0.496

-

IDEA Electronic Components Group

UK . 1,083 parts In-Stock

1+ parts

$0.784

100+ parts

-

1k+ parts

$0.705

10k+ parts

-

1,083

$0.784

-

$0.705

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MKK Technologies

India . 1,151 parts In-Stock

1+ parts

$1.474

100+ parts

-

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1,151

$1.474

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DigiPath Technology Company

USA . 1,151 parts In-Stock

1+ parts

$1.474

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1,151

$1.474

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Corphita

USA . 1,460 parts In-Stock

1+ parts

$1.548

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1,460

$1.548

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RC Electronics

USA . 7,765 parts In-Stock

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7,765

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A-Z Elektronik GmbH

Germany . 5,028 parts In-Stock

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5,028

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Perfect Parts

USA . 2,884 parts In-Stock

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2,884

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Parana Technologies

USA . 2,032 parts In-Stock

1+ parts

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100+ parts

$0.937

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2,032

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$0.937

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Microchip USA

USA . 328 parts In-Stock

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328

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Overview

Elevate your power control solutions with the STGBL6NC60DT4 from STMicroelectronics, a leader in innovative semiconductor technology. This high-quality IGBT delivers exceptional performance with rapid switching capabilities and robust thermal characteristics, making it ideal for applications like motor drives and renewable energy systems. Trust in STMicroelectronics' commitment to excellence, ensuring you get reliability and superior efficiency for your projects. Experience greater energy savings and enhanced system durability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this IGBT reliable in various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel design allows for efficient use in power control applications, enhancing performance in high-side switching configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode eliminates the need for additional components, simplifying circuit design and improving reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is suited for high-efficiency energy management solutions.

Surface Mount: YES

Surface mount technology allows for compact designs, facilitating easier integration into modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, supporting efficient layout designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and soldering characteristics, ensuring a robust connection.

Nominal Turn Off Time (toff): 122 ns

A nominal turn off time of 122 ns improves switching performance, making it suitable for high-frequency applications.

No. of Terminals: 2

Having only 2 terminals simplifies the design and reduces potential points of failure, enhancing reliability.

Maximum Power Dissipation (Abs): 56 W

A maximum power dissipation rating of 56 W allows for efficient thermal management in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is conducive to high-density designs and can fit into tighter spaces on PCBs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this IGBT can perform reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 600 V

Supporting up to 600 V makes this IGBT suitable for a wide range of power applications, ensuring flexibility.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures good electrical performance and reliability.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V provides robust control over the IGBT operation, enhancing performance.

Maximum Collector Current (IC): 14 A

With a maximum collector current of 14 A, this IGBT is ideal for high-power applications requiring significant current handling.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A threshold voltage of 5.75 V allows for reliable switching at reasonable gate drive levels, improving efficiency.

Terminal Finish: MATTE TIN

Matte tin terminal finish aids in solderability and reduces oxidation, resulting in improved reliability over time.

Terminal Position: SINGLE

With a single terminal position, it simplifies the circuit layout, easing the design process and reducing complexity.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates good thermal management during soldering processes, enhancing product durability.

Peak Reflow Temperature °C: 245

A peak reflow temperature of 245 °C ensures compatibility with standard reflow soldering processes, facilitating assembly.

Nominal Turn On Time (ton): 10.5 ns

A fast turn on time of 10.5 ns enables high-speed switching, making this IGBT suitable for rapid turn-on applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGBL6NC60DT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

122 ns

Nominal Turn On Time (ton):

10.5 ns

Trade Compliance

STGBL6NC60DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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