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STGB6NC60HD-1

STMicroelectronics

STGB6NC60HD-1 by STMicroelectronics

STGB6NC60HD-1 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 222ns, and can handle up to 15A of current. This robust device operates efficiently in high-temperature environments up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,080 parts In-Stock

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5,080

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Digiode

USA . 4,037 parts In-Stock

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Anansix

USA . 2,613 parts In-Stock

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2,613

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Distributors (Availability)

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Advanced Electronics

New Zealand . 22 parts In-Stock

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$0.372

100+ parts

$0.339

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$0.305

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22

$0.372

$0.339

$0.305

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IDEA Electronic Components Group

UK . 2,245 parts In-Stock

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$1.546

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$1.391

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$1.546

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$1.391

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MKK Technologies

India . 1,701 parts In-Stock

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$2.906

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DigiPath Technology Company

USA . 1,701 parts In-Stock

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$2.906

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$2.906

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AZTECH Wire

Italy . 348 parts In-Stock

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$12.520

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348

$12.520

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A-Z Elektronik GmbH

Germany . 5,567 parts In-Stock

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Kepictronics

USA . 3,399 parts In-Stock

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3,399

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Corphita

USA . 3,068 parts In-Stock

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3,068

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Parana Technologies

USA . 1,056 parts In-Stock

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$1.848

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$1.848

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Overview

Unlock the potential of your power control applications with the STGB6NC60HD-1 from STMicroelectronics, a leader in semiconductor innovation. This high-performance Insulated Gate Bipolar Transistor (IGBT) combines exceptional durability and reliability, offering superior efficiency for demanding tasks. Designed for versatility, it excels in industrial drives, renewable energy systems, and more—delivering unmatched value that enhances performance and optimizes energy consumption. Upgrade your projects with trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically offer lower conduction losses and higher efficiency, making them a preferred choice in power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the versatility of the IGBT, allowing for easy implementation in circuits requiring both switching and rectification.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can efficiently manage high power loads, making it ideal for industrial use.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, facilitating easier assembly and improved thermal management.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and facilitate easy soldering, making the device reliable in high-stress environments.

Nominal Turn Off Time (toff): 222 ns

A turn off time of 222 ns enables fast switching speeds, contributing to higher efficiency and performance in power electronics.

No. of Terminals: 3

With three terminals, this IGBT offers straightforward integration into circuit designs, making it easy to implement in various applications.

Maximum Power Dissipation (Abs): 56 W

A maximum power dissipation of 56 W allows for efficient thermal management and operation in high-power applications without overheating.

Package Style (Meter): IN-LINE

The in-line package style is common and widely compatible with numerous PCB layouts, making sourcing and replacements easier.

Maximum Operating Temperature: 150 °C

An operating temperature of 150 °C ensures reliability in high-temperature environments, making it suitable for robust applications.

Maximum Collector-Emitter Voltage: 600 V

A collector-emitter voltage rating of 600 V makes this IGBT capable of handling high voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon is a well-established material known for its excellent electrical properties, ensuring performance and reliability in power electronics.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V allows for compatible drive circuits and minimizes risk of damage under normal operating conditions.

Maximum Collector Current (IC): 15 A

With a collector current rating of 15 A, this IGBT can efficiently handle significant load currents, making it ideal for industrial systems.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

A threshold voltage of 5.75 V ensures adequate drive levels, providing reliable operation and minimizing the risk of accidental turn-on.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit design, reducing complexity and the potential for layout errors.

Nominal Turn On Time (ton): 17.3 ns

A fast turn on time of 17.3 ns contributes to efficient switching operations, making this IGBT suitable for high-performance applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB6NC60HD-1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

222 ns

Nominal Turn On Time (ton):

17.3 ns

Trade Compliance

STGB6NC60HD-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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