Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2N5089RLRAG
Onsemi
2N5089RLRAG by Onsemi is a NPN BJT transistor with hFE of 400, VCE of 25V, and IC of 0.05A. Ideal for amplifier applications due to its high transition frequency of 50MHz and max power dissipation of 0.35W in a cylindrical package.
LOW NOISE
.05 A
25 V
SINGLE
400
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
.35 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
SILICON
50 MHz
MPS2222ARLG
MPS2222ARLG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, ideal for switching applications. Features include min. DC current gain of 35 and max. power dissipation of 0.625W in a cylindrical package style. Suitable for through-hole mounting with terminal finish Sn/Ag/Cu.
EUROPEAN PART NUMBER
.6 A
40 V
35
.625 W
Tin/Silver/Copper (Sn/Ag/Cu)
40
SWITCHING
300 MHz
285 ns
35 ns
MPS2222ARLRAG
MPS2222ARLRAG by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 35. Ideal for switching applications, it has a max. collector-emitter voltage of 40V and operates at up to 150°C.
MPS2222ARLRPG
MPS2222ARLRPG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V and max. collector current of 0.6A. It has a min. DC current gain of 35 and operates at up to 150°C, making it suitable for switching applications in various electronic circuits. With a nominal transition frequency of 300MHz, this through-hole transistor offers fast turn-on/off times for efficient performance.
MPS2369AG
MPS2369AG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it's suitable for high-speed circuit designs.
.2 A
15 V
20
.36 W
500 MHz
18 ns
12 ns
MPS651RLRMG
MPS651RLRMG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40 (hFE). With a package style of cylindrical and max operating temp of 150 °C, it's suitable for various electronic designs.
2 A
60 V
75 MHz
MPS6602G
MPS6602G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
1 A
30
100 MHz
300 ns
55 ns
MPS6651G
MPS6651G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and max collector current of 1A. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
PNP
75 ns
280 ns
MPS6652G
MPS6652G by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation and hFE of 30. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS6652RLRAG
MPS6652RLRAG by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation, hFE of 30, and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS751G
MPS751G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40. The package style is cylindrical with through-hole terminals made of tin silver copper.
MPS751RLRPG
MPS751RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its high transition frequency of 75MHz and max. collector current of 2A in a cylindrical package style.
MPSA05RLRMG
MPSA05RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a package style of cylindrical and can handle up to 150°C operating temperature.
.5 A
100
MPSA13RLRPG
MPSA13RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 30V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and low collector-emitter voltage. Its cylindrical package makes it suitable for through-hole mounting in various electronic circuits.
30 V
DARLINGTON
10000
125 MHz
MPSA14RLRAG
MPSA14RLRAG by Onsemi is a NPN Darlington BJT with hFE of 20000, VCEO of 30V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency response in a cylindrical package with through-hole terminals.
20000
MPSA27G
MPSA27G by Onsemi is a NPN Darlington BJT transistor with hFE of 10000, Vce of 60V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
TO-226AA
MPSA42RLRPG
MPSA42RLRPG by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it has a min hFE of 40 and can operate up to 150°C. The package is cylindrical with through-hole terminals made of tin silver copper.
300 V
MPSA43ZL1G
MPSA43ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 200V, ideal for low-power applications. Featuring a min. DC current gain of 40 and max. operating temp of 150°C, it's suitable for small signal amplification in various electronic circuits. With a peak reflow temp of 260°C and nominal transition frequency of 50MHz, this transistor offers reliable performance in through-hole configurations.
200 V
MPSA44RLRAG
MPSA44RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a min. DC current gain of 40 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.
.3 A
400 V
20 MHz
MPSA55RLRAG
MPSA55RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 100 and can handle a max collector-emitter voltage of 60V. With a max operating temperature of 150°C, it has a power dissipation of 0.625W in a cylindrical package suitable for through-hole mounting.
MPSA56RLRMG
MPSA56RLRMG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its cylindrical package style, it has a max power dissipation of 0.625W and operates up to 150 °C temperature range.
80 V
MPSA92RLRAG
MPSA92RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. Featuring a min. DC current gain of 25 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style and cylindrical shape make it suitable for various electronic designs.
25
MPSA92RLRPG
MPSA92RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 25, and can handle up to 300V collector-emitter voltage. Its package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
PN2222AG
PN2222AG by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W, hFE of 75, and fT of 300MHz. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 0.6A.
75
PN2907AG
PN2907AG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 60V, such as amplifiers and signal processing circuits due to its high transition frequency of 200MHz.
50
1.5 W
200 MHz
100 ns
45 ns
MPS2907ARL1G
MPS2907ARL1G by Onsemi is a PNP BJT with max. power dissipation of 0.36W, hFE of 100, and max. operating temp of 150 °C. Ideal for applications requiring a small signal transistor with a collector-emitter voltage of 60V, such as amplifiers or switching circuits due to its high transition frequency of 200MHz.
MPS2907ARLREG
MPS2907ARLREG by Onsemi is a PNP BJT with hFE of 100, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring fast switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: tin silver copper, and max operating temp: 150 °C make it versatile for various designs.
SSM2220PZ
Analog Devices
SSM2220PZ by Analog Devices is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. It has a min hFE of 80, max operating temp of 150 °C, and max VCE of 36V. The transistor's package style is in-line with through-hole terminals and a transition frequency of 190MHz.
.02 A
36 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
80
R-PDIP-T8
e3
2
8
RECTANGULAR
IN-LINE
MATTE TIN
DUAL
190 MHz
BF422G
BF422G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.8W, hFE of 50, and operates at up to 150 °C. With a max VCE of 250V and fT of 60MHz, it's suitable for various electronic circuits requiring high voltage amplification.
250 V
.8 W
60 MHz
MPS650RLRAG
MPS650RLRAG by Onsemi is a NPN BJT transistor with 40V VCEO, 2A IC, and 1.5W Ptot. Ideal for amplifier applications due to its hFE of 40 and fT of 75MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS750G
MPS750G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1.5W, and max. collector current of 2A. Ideal for amplifier applications, it has a min. DC current gain of 40 (hFE), operates up to 150 °C, and offers a nominal transition frequency of 75MHz in a cylindrical package style.
MPS750RLRPG
MPS750RLRPG by Onsemi is a PNP BJT with 40V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, SILICON material, and THROUGH-HOLE terminals in a CYLINDRICAL package style. Operating up to 150 °C, it offers reliable performance in various electronic designs.
MPS751RLRAG
MPS751RLRAG by Onsemi is a PNP BJT with 3 terminals, 1.5W power dissipation, and 60V collector-emitter voltage. Ideal for amplifier applications, it has a DC current gain of 40 and operates at up to 150 °C. The transistor's SILICON element ensures reliable performance in various electronic circuits.
MPS751ZL1G
MPS751ZL1G by Onsemi is a PNP BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, hFE of 40, and operating temperature up to 150 °C. Packaged in a cylindrical body with through-hole terminals for easy installation.
2N5401G
The Onsemi 2N5401G is a PNP BJT transistor with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is commonly used in amplifier applications due to its high transition frequency of 100MHz and max. power dissipation of 0.63W for efficient signal amplification.
150 V
.63 W
2N4401G
2N4401G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
250 MHz
255 ns
2N4403RLRMG
2N4403RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
BC237BRL1G
BC237BRL1G by Onsemi is a NPN BJT transistor with a max power dissipation of 0.35W and min DC current gain of 200, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, operating temperature up to 150°C, and nominal transition frequency of 200MHz in a cylindrical package.
.1 A
45 V
200
BC237BZL1G
BC237BZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, ideal for amplifier applications. It has a min. DC current gain of 200 and max. operating temp of 150 °C, making it suitable for low-power circuits requiring high frequency response up to 200MHz. The package style is cylindrical with through-hole terminals, offering easy installation in various electronic devices.
BC327-40ZL1G
BC327-40ZL1G by Onsemi is a PNP BJT transistor with hFE of 250, VCEO of 45V, and IC of 0.8A. Ideal for amplifier applications due to its high transition frequency of 260MHz and max power dissipation of 0.625W in a cylindrical package. Operating temperature ranges from -55 to 150°C making it suitable for various electronic designs.
.8 A
250
-55 Cel
260 MHz
BC337-40RL1G
BC337-40RL1G by Onsemi is a NPN BJT transistor with hFE of 250, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates b/w -55 to 150 °C. Package style is cylindrical with through-hole terminals.
210 MHz
BC373RL1G
BC373RL1G by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and can operate up to 150 °C, making it suitable for various electronic designs requiring high performance in a small package.
8000
BC546BRL1G
BC546BRL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W and min. DC current gain of 200. It is used in amplifier applications, has max. collector-emitter voltage of 65V, and operates at up to 150°C.
65 V
BC546BZL1G
BC546BZL1G by Onsemi is a NPN BJT transistor with hFE of 200. It has a max power dissipation of 0.625W and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 65V and max collector current of 0.1A.
BC548CZL1G
BC548CZL1G by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 30V, and IC of 0.1A. Ideal for amplifier applications due to its high transition frequency of 300MHz and max power dissipation of 0.625W in a cylindrical package.
420
BF421ZL1G
BF421ZL1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.83W, hFE of 50, and can handle up to 300V collector-emitter voltage. With a transition frequency of 60MHz and operating temperature up to 150 °C, it's suitable for various electronic circuits requiring high-speed switching capabilities.
.83 W
BF422ZL1G
BF422ZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for amplifier applications. It has a min. DC current gain of 50 and max. power dissipation of 0.83W in a cylindrical package style, suitable for through-hole mounting at up to 150 °C operating temperature.
BF423ZL1G
BF423ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.83W, hFE of 50, and VCE of 250V. Ideal for amplifier applications due to its high transition frequency of 60MHz and max. collector current of 0.05A in a cylindrical package style.
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