Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ZTX1149ASTOB
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;
3 A
50 pF
25 V
SINGLE
115
R-PSIP-W3
1
3
200 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
PNP
1 W
NO
WIRE
SILICON
135 MHz
.3 V
ZTX1149ASTZ
e3
260
MATTE TIN
30
ZTX1051ASTOB
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;
LOW NOISE
4 A
40 pF
40 V
45
NPN
SWITCHING
155 MHz
.21 V
ZTX1051ASTZ
ZTX1048ASTOB
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;
80 pF
17.5 V
50
150 MHz
.245 V
ZTX1048ASTOA
ZTX1048ASTZ
CE2A3Q-T-AZ
Renesas Electronics
NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;
2 A
500
BIP General Purpose Small Signal
2SC2909S-AA
Onsemi
2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.
.07 A
2 pF
160 V
140
O-PBCY-T3
150 Cel
ROUND
CYLINDRICAL
.6 W
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
THROUGH-HOLE
BOTTOM
TTB1020B,S4X(S
Toshiba
PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 7 A; No. of Elements: 2; Transistor Element Material: SILICON;
7 A
2000
2
30 W
STL73D-AP
STMicroelectronics
STL73D-AP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 1.5A max collector current, and 1.5W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode and fast turn-off time of 4700ns. Package style is cylindrical with matte tin terminal finish.
1.5 A
400 V
SINGLE WITH BUILT-IN DIODE
4
TO-92
1.5 W
Not Qualified
Other Transistors
4700 ns
BC640-016G
BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.
.5 A
80 V
25
TO-226AA
e1
TIN SILVER COPPER
2SC2655L-Y-AP
Micro Commercial Components
2SC2655L-Y-AP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 2A. It is commonly used in small signal applications due to its silicon element material and fT of 100MHz. The package style is cylindrical with through-hole terminals.
50 V
120
100 MHz
LP395Z/LFT4
Texas Instruments
NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: MATTE TIN; No. of Elements: 1; Maximum Operating Temperature: 125 Cel;
125 Cel
BC548CB1G
Taiwan Semiconductor
BC548CB1G by Taiwan Semiconductor is a NPN BJT with max power dissipation of 0.5W and min hFE of 420. It operates at up to 150°C, handles max IC of 0.1A, and has matte tin terminal finish. Ideal for small signal applications in various electronic circuits due to its single configuration and high DC current gain.
.1 A
420
.5 W
10
BC549CB1G
BC549CB1G by Taiwan Semiconductor is a NPN BJT transistor with max. power dissipation of 0.5W, hFE of 420, and VCE of 30V. Ideal for switching applications due to its single configuration and through-hole terminal form in a cylindrical package style. Operating temp ranges from -65°C to 150°C making it suitable for various electronic devices.
30 V
-65 Cel
2SA608NF-NPA-AT
The Onsemi 2SA608NF-NPA-AT is a PNP BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and max IC of 0.15A. Packaged in cylindrical shape with through-hole terminals for easy installation.
.15 A
160
Tin (Sn)
AMPLIFIER
200 MHz
2SC536NF-NPA-AT
2SC536NF-NPA-AT by Onsemi is a NPN BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Packaged in a cylindrical shape with through-hole terminals for easy installation.
ZTX651QSTZ
ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.
100
140 MHz
2SA2205-E
The Onsemi 2SA2205-E is a PNP BJT transistor with hFE of 200, VCE of 100V, and IC of 2A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and through-hole terminals make it suitable for high-frequency (300MHz) in-line package designs.
100 V
200
TO-251
R-PSIP-T3
e6
Tin/Bismuth (Sn/Bi)
300 MHz
2SA2127-AE
2SA2127-AE by Onsemi is a PNP BJT transistor with max. power dissipation of 1W, max. collector-emitter voltage of 50V, and max. collector current of 2A. Ideal for switching applications due to its single configuration and cylindrical package style, it has a min DC current gain of 40 and operates up to 150°C.
40
TO-226AE
420 MHz
2SB1216S-E
The Onsemi 2SB1216S-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it has through-hole terminals and a power dissipation of 20W in an inline style package.
COLLECTOR
20 W
TIN BISMUTH
130 MHz
2SB1216S-H
The Onsemi 2SB1216S-H is a PNP BJT transistor with max. power dissipation of 20W, hFE of 140, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 130MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.
2SB1216T-E
The Onsemi 2SB1216T-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is in-line, making it suitable for through-hole mounting in various electronic circuits.
2SD1816S-E
The Onsemi 2SD1816S-E is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. The package style is in-line with through-hole terminals, making it suitable for high-power dissipation up to 20W in various electronic circuits.
180 MHz
2SD1816S-H
Onsemi's 2SD1816S-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. current of 4A. It has a min. DC current gain of 140, making it suitable for switching applications up to 20W power dissipation at 150°C. The through-hole package style with tin bismuth finish is ideal for various electronic designs requiring high-speed performance at a nominal transition frequency of 180MHz.
2SD1816T-E
2SD1816T-E by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its single configuration and high transition frequency of 180MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.
2SD1816T-H
Onsemi's 2SD1816T-H is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 180MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.
2SD1815S-H
The Onsemi 2SD1815S-H is a NPN BJT with max power dissipation of 20W, hFE of 140, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150 °C.
2SD1815T-H
The Onsemi 2SD1815T-H is a NPN BJT with max power dissipation of 20W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.
2N3903/D26Z
National Semiconductor
2N3903/D26Z by National Semiconductor is a NPN BJT transistor with VCEsat of 0.2V, hFE of 50, and IC of 0.2A. Ideal for switching applications due to its fast ton of 70ns and toff of 225ns. With a max VCE of 40V and fT of 250MHz, it offers reliable performance in various electronic circuits.
HIGH SPEED SATURATED SWITCHING
.2 A
250 MHz
225 ns
70 ns
.2 V
NTE159
Nte Electronics
NTE159 by Nte Electronics is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 30, and VCE of 80V. Ideal for switching applications due to its fast turn-on/off times (ton: 100ns, toff: 400ns) and high collector current (IC: 1A).
1 A
O-PBCY-W3
NOT SPECIFIED
400 ns
100 ns
NTE103
NTE103 by Nte Electronics is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 24, and VCE of 16V. Ideal for switching applications due to its Germanium element material and max. collector current of 0.15A in a cylindrical package shape with wire terminals.
16 V
24
TO-5
O-MBCY-W3
METAL
.15 W
GERMANIUM
2 MHz
ZTX453STOB
Zetex Plc
ZTX453STOB by Zetex Plc is a NPN BJT transistor with VCEsat of 0.7V, hFE of 10, and IC of 1A. Ideal for switching applications, it has a max operating temp of 200°C and fT of 150MHz. Package style: IN-LINE, terminal finish: MATTE TIN, and package shape: RECTANGULAR.
15 pF
2 W
.7 V
ZTX451STOB
ZTX451STOB by Zetex Plc is a NPN BJT transistor for switching applications. With VCEsat of 0.35V, hFE of 10, and IC of 1A, it operates at max temp of 200°C. Its package style is IN-LINE with 3 terminals and can handle up to 2W power dissipation.
60 V
CECC
.35 V
ZTX753STOA
ZTX753STOA by Zetex Plc is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temp of 200°C, it's ideal for high-power switching circuits in various electronic devices.
30 pF
2.5 W
.5 V
ZTX753STOB
ZTX753STOB by Zetex Plc is a PNP BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temperature of 200°C, it's ideal for high-power switching circuits in various electronic devices.
ZTX758STOB
ZTX758STOB by Zetex Plc is a PNP BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 0.5A, it operates at up to 200°C. Its package style is in-line with 3 wire terminals, making it suitable for high-temperature switching circuits.
50 MHz
ZTX795ASTOA
ZTX795ASTOA by Zetex Plc is a PNP BJT transistor for switching applications. With VCEsat of 0.3V, hFE of 100, and IC of 0.5A, it operates at up to 200°C. Its silicon element and matte tin finish make it suitable for high-temperature environments requiring fast switching speeds up to 100MHz.
140 V
BCX38CSTOB
BCX38CSTOB by Zetex Plc is a NPN Darlington transistor with max VCEsat of 1.25V, hFE of 10000, and IC of 0.8A. Ideal for switching applications due to its high current gain and low saturation voltage. This rectangular plastic transistor operates up to 200°C making it suitable for various industrial uses.
.8 A
DARLINGTON
10000
1.25 V
2SC1741ASTPQ
ROHM
ROHM 2SC1741ASTPQ is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 120, and fT of 250MHz. Ideal for switching applications due to its max. collector-emitter voltage of 50V and max. collector current of 0.5A in a through-hole package style.
.3 W
BF494D27Z
BF494D27Z by National Semiconductor is a NPN BJT with hFE of 65. It has a single configuration and comes in a cylindrical package. Ideal for low-power applications in electronics due to its silicon transistor element material and through-hole terminal form.
65
BF494D74Z
BF494D74Z by National Semiconductor is a NPN BJT with hFE of 65. It has a single configuration and comes in a cylindrical package. Ideal for low-power applications like amplifiers and oscillators due to its small signal capabilities.
2N3859AD75Z
Fairchild Semiconductor
2N3859AD75Z by Fairchild Semiconductor is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 0.5A. It has a min DC current gain of 100, making it suitable for switching applications. With a nominal transition frequency of 90MHz, this transistor is ideal for high-frequency operations in various electronic circuits.
.2 W
Matte Tin (Sn)
90 MHz
ZTX1053ASTZ
ZTX1053ASTZ by Zetex Plc is a NPN BJT transistor with hFE of 100, VCE of 75V, and IC of 3A. Ideal for small signal applications in electronics due to its high transition frequency of 140MHz. Its cylindrical package with wire terminals makes it suitable for various circuit configurations.
75 V
PN4249D74Z
Fairchild Semiconductor's PN4249D74Z is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.6W and can handle up to 0.5A collector current. Ideal for switching applications, it operates at temperatures up to 150°C in a round package with matte tin finish.
MAT12AHZ
Analog Devices
MAT12AHZ by Analog Devices is a NPN BJT with 2 elements & built-in diode. It has hFE of 300, fT of 200 MHz, & IC of 0.02 A. Ideal for amplifier applications due to its high gain, low collector-emitter voltage of 40 V, & operating temperature up to 150°C.
SUBSTRATE
.02 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
300
O-MBCY-W6
6
DTC114ESATP
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
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