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ZTX453STOB

Zetex Plc

ZTX453STOB by Zetex Plc

ZTX453STOB by Zetex Plc is a NPN BJT transistor with VCEsat of 0.7V, hFE of 10, and IC of 1A. Ideal for switching applications, it has a max operating temp of 200°C and fT of 150MHz. Package style: IN-LINE, terminal finish: MATTE TIN, and package shape: RECTANGULAR.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,454 parts In-Stock

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8,454

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Nova Conductors

Japan . 10 parts In-Stock

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10

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AZTECH Wire

Italy . 864 parts In-Stock

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$10.494

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864

$10.494

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the ZTX453STOB by Zetex Plc, a high-quality NPN Small Signal Bipolar Junction Transistor perfect for switching applications. This product offers unmatched reliability and performance, thanks to Zetex Plc's reputation for excellence in manufacturing. From its durable plastic/epoxy package body to its impressive maximum VCEsat of 0.7V, the ZTX453STOB delivers exceptional value and benefits to customers seeking top-tier transistor solutions. Upgrade your projects with confidence and precision using this innovative component from Zetex Plc.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage during handling and installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile and suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and operation, making it easier for engineers to integrate the transistor into their projects.

Transistor Application: SWITCHING

With a specified application for switching purposes, this transistor is optimized for fast and efficient switching operations in electronic circuits.

Maximum VCEsat: 0.7 V

The low VCEsat value indicates efficient power consumption and minimal voltage drop across the collector-emitter junction, improving overall circuit performance.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on circuit boards, enhancing the transistor's integration into electronic devices.

Terminal Form: WIRE

Wire terminals provide a secure connection and easy soldering, ensuring reliable performance and longevity of the transistor in the circuit.

No. of Terminals: 3

The three-terminal configuration simplifies circuit connections and allows for easy interfacing with other components, enhancing the usability of the transistor.

Package Style (Meter): IN-LINE

The in-line package style offers a compact design that saves space on the circuit board, making it suitable for applications with limited space constraints.

Maximum Power Dissipation Ambient: 2 W

The high power dissipation rating ensures the transistor can handle significant power loads without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 10

The minimum hFE value indicates good amplification characteristics, allowing the transistor to boost weak input signals with minimal distortion.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature ensures the transistor can withstand elevated temperatures without performance degradation, making it suitable for industrial environments.

Maximum Collector-Base Capacitance: 15 pF

The low capacitance value minimizes the risk of signal distortion and interference in high-frequency applications, ensuring accurate signal transmission.

Maximum Collector-Emitter Voltage: 100 V

The high maximum voltage rating allows the transistor to handle substantial voltage levels without breakdown, ensuring reliable operation in high-voltage circuits.

Transistor Element Material: SILICON

Silicon is a widely-used semiconductor material known for its high temperature resistance and reliable performance, making it an ideal choice for the transistor element.

Maximum Collector Current (IC): 1 A

The high collector current rating enables the transistor to handle large current flows without overheating or damage, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good solderability and corrosion resistance, ensuring secure connections and long-term reliability in various operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and prevents errors in component placement, ensuring proper functionality and ease of use.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency indicates the transistor's ability to amplify high-frequency signals accurately, making it suitable for radio frequency and digital applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX453STOB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Zetex Plc

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

ZTX453STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

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