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ZTX455

Diodes Incorporated

ZTX455 by Diodes Incorporated

ZTX455 by Diodes Inc. is a NPN transistor with a max collector-emitter voltage of 140V and a max collector current of 1A. It has a min DC current gain of 100 and can operate at temperatures up to 200°C. This transistor is commonly used in small signal applications requiring high voltage and current capabilities.

Median Price

$0.852

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 3,900 parts In-Stock

1+ parts

$0.714

100+ parts

$0.440

1k+ parts

$0.303

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-

3,900

$0.714

$0.440

$0.303

-

Farnell

UK . 3,900 parts In-Stock

1+ parts

$0.813

100+ parts

$0.441

1k+ parts

$0.291

10k+ parts

$0.285

3,900

$0.813

$0.441

$0.291

$0.285

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$0.892

100+ parts

$0.812

1k+ parts

$0.731

10k+ parts

-

70

$0.892

$0.812

$0.731

-

Mouser Electronics

USA . 7,655 parts In-Stock

1+ parts

$1.190

100+ parts

$0.475

1k+ parts

$0.301

10k+ parts

$0.266

7,655

$1.190

$0.475

$0.301

$0.266

Newark

USA . 798 parts In-Stock

1+ parts

$1.230

100+ parts

$0.502

1k+ parts

$0.332

10k+ parts

-

798

$1.230

$0.502

$0.332

-

DigiKey

USA . 4,104 parts In-Stock

1+ parts

$1.270

100+ parts

$0.522

1k+ parts

$0.368

10k+ parts

$0.287

4,104

$1.270

$0.522

$0.368

$0.287

Verical

USA . 8,000 parts In-Stock

1+ parts

-

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$0.257

8,000

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$0.257

Arrow

USA . 3,908 parts In-Stock

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$0.180

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3,908

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-

$0.180

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.349

100+ parts

-

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10

$0.349

-

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Component Electronics Inc.

Canada . 90 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

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90

$0.770

$0.580

$0.500

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Chip Stock

USA . 23,500 parts In-Stock

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-

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23,500

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 17,749 parts In-Stock

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17,749

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

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$0.270

4,000

-

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-

$0.270

Vyrian

USA . 3,819 parts In-Stock

1+ parts

-

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3,819

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ACDS - Activité Composants Distribution Service

France . 250 parts In-Stock

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250

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ABC Electronics Ltd.

UK . 47 parts In-Stock

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47

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Prism Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Semicontronic

India . 3,442 parts In-Stock

1+ parts

$0.164

100+ parts

$0.160

1k+ parts

$0.159

10k+ parts

-

3,442

$0.164

$0.160

$0.159

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Continental Prestige Electronics

USA . 5,564 parts In-Stock

1+ parts

$0.349

100+ parts

-

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$0.342

5,564

$0.349

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-

$0.342

Argo Parts USA

USA . 4,360 parts In-Stock

1+ parts

$0.349

100+ parts

-

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$0.338

4,360

$0.349

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-

$0.338

Corohmni

South Africa . 902 parts In-Stock

1+ parts

$0.360

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902

$0.360

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.892

100+ parts

$0.812

1k+ parts

$0.731

10k+ parts

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70

$0.892

$0.812

$0.731

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Benley Electronics

USA . 4 parts In-Stock

1+ parts

$1.000

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4

$1.000

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Aztec Data Supply Inc.

USA . 3,581 parts In-Stock

1+ parts

$1.677

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3,581

$1.677

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Microchip USA

USA . 5,739 parts In-Stock

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$5.005

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5,739

$5.005

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Authorized Procurement Solutions

USA . 19,250 parts In-Stock

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Perfect Parts

USA . 9,395 parts In-Stock

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9,395

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QUARKTWIN TECHNOLOGY LTD

USA . 2,878 parts In-Stock

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2,878

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Cyclops Electronics Ltd (Excess)

UK . 250 parts In-Stock

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250

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Kepictronics

USA . 183 parts In-Stock

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183

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Overview

Discover the ZTX455, a small signal bipolar junction transistor (BJT) by Diodes Incorporated. With a reputation for manufacturing excellence, Diodes Incorporated brings you a high-quality product that guarantees exceptional performance. The ZTX455 offers numerous advantages and benefits across various applications. Its NPN polarity and single configuration make it versatile while its 1W maximum power dissipation ensures reliability. With a minimum DC current gain of 100 and a maximum operating temperature of 200°C, this transistor is built to deliver outstanding results. Experience the value and advantages that the ZTX455 brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for various electronic applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate the transistor into electronic devices.

Maximum Power Dissipation (Abs): 1 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures efficient amplification and signal processing in electronic circuits.

Max Collector-Emitter Voltage: 140 V

The high max collector-emitter voltage allows this transistor to be used in a wide range of applications, including power supplies and voltage regulators.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency indicates that this transistor can operate at high frequencies, making it suitable for RF applications and high-speed switching circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX455 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX455 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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