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ZTX450M1

Diodes Incorporated

ZTX450M1 by Diodes Incorporated

ZTX450M1 by Diodes Inc. is a NPN BJT transistor with max. VCE of 45V and IC of 1A. With hFE of 15 and fT of 150MHz, it's ideal for switching applications in small outline packages with gull wing terminals.

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 489 parts In-Stock

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489

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 971 parts In-Stock

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$0.614

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971

$0.614

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Corohmni

South Africa . 63 parts In-Stock

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$1.290

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63

$1.290

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AZTECH Wire

Italy . 424 parts In-Stock

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$14.692

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Continental Prestige Electronics

USA . 3,123 parts In-Stock

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Argo Parts USA

USA . 2,641 parts In-Stock

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Bastille Electronics

Australia . 71 parts In-Stock

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Overview

Unleash the power of innovation with the ZTX450M1 by Diodes Incorporated. Designed to deliver unmatched performance and reliability, this NPN Small Signal Bipolar Junction Transistor (BJT) is perfect for a wide range of switching applications. With its durable plastic/epoxy body and gull wing terminals, this transistor offers easy installation and long-lasting functionality. Experience seamless operation and superior quality with the ZTX450M1, providing customers with unbeatable value and efficiency. Elevate your projects to new heights with this cutting-edge component from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and cost-effective, while still providing protection for the internal components.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, making this transistor versatile and suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making it easier to integrate into a circuit board.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, providing fast and efficient operation in switching circuits.

Surface Mount: YES

The surface mount capability allows for easy and secure attachment to a circuit board, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor that is easy to handle and mount on a circuit board.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and easy soldering, ensuring reliable performance in a variety of applications.

No. of Terminals: 3

With only 3 terminals, this transistor is easy to install and less likely to be misconfigured, simplifying the design process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on a circuit board, making this transistor ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures consistent and reliable performance in a variety of operating conditions.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage of 45V makes this transistor suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, ensuring long-term stability and durability of the transistor.

Maximum Collector Current (IC): 1 A

The high maximum collector current of 1A allows this transistor to handle relatively high power levels, making it suitable for a wide range of applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit board layout and reduces the risk of errors during installation, improving overall reliability.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX450M1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX450M1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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