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ZTX450Q

Diodes Incorporated

ZTX450Q by Diodes Incorporated

ZTX450Q by Diodes Inc. is a NPN BJT transistor with max. VCE of 45V and IC of 1A, ideal for switching applications. Featuring hFE of 15 and fT of 150MHz, it comes in a plastic package with matte tin finish, suitable for various CECC standard circuits requiring high-speed performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 759 parts In-Stock

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759

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Aztec Data Supply Inc.

USA . 4,628 parts In-Stock

1+ parts

$0.897

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4,628

$0.897

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Corohmni

South Africa . 608 parts In-Stock

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$0.904

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608

$0.904

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AZTECH Wire

Italy . 208 parts In-Stock

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$9.095

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208

$9.095

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Semicontronic

India . 642 parts In-Stock

1+ parts

$49.050

100+ parts

$47.824

1k+ parts

$47.578

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642

$49.050

$47.824

$47.578

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Continental Prestige Electronics

USA . 4,736 parts In-Stock

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4,736

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Argo Parts USA

USA . 3,231 parts In-Stock

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Bastille Electronics

Australia . 82 parts In-Stock

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Overview

Discover the power of the ZTX450Q by Diodes Incorporated, a top-tier manufacturer known for its superior quality and reliability. As a Small Signal Bipolar Junction Transistor (BJT), this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 45V and a collector current of 1A, this transistor offers exceptional performance and efficiency. Whether you're a hobbyist or a professional, the ZTX450Q provides unmatched value and benefits, making it the ideal choice for your next project. Experience the difference with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and provides good insulation and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used and have high efficiency and fast switching speeds.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in circuit boards.

Terminal Form: WIRE

Wire terminals make for easy and secure connections in the circuit.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits.

Package Style (Meter): IN-LINE

In-line package style provides a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 ensures stable and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 45 V

Can handle higher voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 1 A

Can handle high current loads, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good conductivity and corrosion resistance for the terminals.

Terminal Position: SINGLE

Single terminal position for easy connection in the circuit.

Reference Standard: CECC

Complies with CECC standards ensuring quality and reliability in operation.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast switching speeds and improved performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX450Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX450Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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