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ZTX450STOB

Diodes Incorporated

ZTX450STOB by Diodes Incorporated

ZTX450STOB by Diodes Inc. is a NPN BJT transistor with max. 45V VCE, 1A IC, and 150MHz fT. Ideal for switching applications due to its single configuration and high DC current gain of min. 15 hFE. Packaged in plastic/epoxy with matte tin finish, it has an inline shape with 3 wire terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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6,000

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Vyrian

USA . 1,051 parts In-Stock

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1,051

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Nova Conductors

Japan . 88 parts In-Stock

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88

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 318 parts In-Stock

1+ parts

$1.115

100+ parts

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318

$1.115

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Corohmni

South Africa . 64 parts In-Stock

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$1.814

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64

$1.814

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AZTECH Wire

Italy . 300 parts In-Stock

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$11.947

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300

$11.947

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Semicontronic

India . 1,247 parts In-Stock

1+ parts

$31.050

100+ parts

$30.274

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$30.118

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1,247

$31.050

$30.274

$30.118

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Component Stockers USA

USA . 356 parts In-Stock

1+ parts

$99.990

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356

$99.990

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Perfect Parts

USA . 40,320 parts In-Stock

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40,320

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Cyclops Electronics Ltd (Excess)

UK . 18,000 parts In-Stock

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18,000

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Continental Prestige Electronics

USA . 5,438 parts In-Stock

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5,438

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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4,800

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Argo Parts USA

USA . 4,411 parts In-Stock

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4,411

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Unlock the power of reliable switching performance with the ZTX450STOB by Diodes Incorporated. As a leading manufacturer in small signal bipolar junction transistors, Diodes Incorporated delivers top-quality products for a wide range of applications. The ZTX450STOB offers customers unmatched value with its NPN configuration, high collector-emitter voltage of 45V, and maximum collector current of 1A. Experience seamless operation and superior results with the ZTX450STOB - the perfect choice for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for switching applications with good amplification capabilities.

Configuration: SINGLE

Simplified design and easier to use in circuits requiring a single transistor configuration.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in tasks that require rapid on/off switching.

Maximum Collector-Emitter Voltage: 45 V

Can handle higher voltage levels, providing versatility in applications that require higher voltage capabilities.

Maximum Collector Current (IC): 1 A

Capable of handling higher currents, making it suitable for circuits that require higher current levels for operation.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast signal processing and switching, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX450STOB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX450STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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