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ZTX451STOA

Diodes Incorporated

ZTX451STOA by Diodes Incorporated

ZTX451STOA by Diodes Inc. is a NPN BJT transistor with hFE of 10, Vce of 60V, and IC of 1A. It is used for switching applications due to its high transition frequency of 150MHz. The package style is in-line with matte tin terminal finish, making it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 832 parts In-Stock

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832

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 3,186 parts In-Stock

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$0.405

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$0.405

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Corohmni

South Africa . 206 parts In-Stock

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$1.659

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AZTECH Wire

Italy . 832 parts In-Stock

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$19.317

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$19.317

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Component Stockers USA

USA . 738 parts In-Stock

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$99.990

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738

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QUARKTWIN TECHNOLOGY LTD

USA . 23,602 parts In-Stock

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Argo Parts USA

USA . 3,635 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Continental Prestige Electronics

USA . 155 parts In-Stock

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Overview

Upgrade your electronics with the ZTX451STOA by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured with precision and expertise, this NPN transistor offers a maximum collector-emitter voltage of 60V and a peak reflow temperature of 260°C. With a minimum DC current gain of 10 and a nominal transition frequency of 150MHz, the ZTX451STOA guarantees optimal performance and reliability. Trust Diodes Incorporated for cutting-edge technology that delivers exceptional value and efficiency in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in related circuits.

Maximum Collector-Emitter Voltage: 60 V

With a high voltage rating, this transistor can handle larger voltage levels, expanding its range of applications.

Maximum Collector Current (IC): 1 A

With a high collector current rating, this transistor can handle higher current loads, making it suitable for various applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX451STOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX451STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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