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ZTX453STZ

Diodes Incorporated

ZTX453STZ by Diodes Incorporated

ZTX453STZ by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 1A. It is commonly used for switching applications due to its high transition frequency of 150MHz.

Median Price

$0.655

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,955 parts In-Stock

1+ parts

$0.655

100+ parts

$0.386

1k+ parts

$0.322

10k+ parts

-

1,955

$0.655

$0.386

$0.322

-

Mouser Electronics

USA . 5,947 parts In-Stock

1+ parts

$1.000

100+ parts

$0.389

1k+ parts

$0.283

10k+ parts

$0.226

5,947

$1.000

$0.389

$0.283

$0.226

DigiKey

USA . 3,634 parts In-Stock

1+ parts

$1.170

100+ parts

$0.480

1k+ parts

$0.336

10k+ parts

-

3,634

$1.170

$0.480

$0.336

-

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.779

100+ parts

$1.619

1k+ parts

$1.459

10k+ parts

-

500

$1.779

$1.619

$1.459

-

Verical

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.224

20,000

-

-

-

$0.224

Element14

Singapore . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.388

1k+ parts

$0.300

10k+ parts

-

4,000

-

$0.388

$0.300

-

Farnell

UK . 1,955 parts In-Stock

1+ parts

-

100+ parts

$0.339

1k+ parts

$0.236

10k+ parts

-

1,955

-

$0.339

$0.236

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$0.272

100+ parts

-

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-

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87

$0.272

-

-

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Chip Stock

USA . 78,090 parts In-Stock

1+ parts

-

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78,090

-

-

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Vyrian

USA . 3,895 parts In-Stock

1+ parts

-

100+ parts

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3,895

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-

-

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LIBRA Elektronik GmbH

Germany . 1,446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,446

-

-

-

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Speed Components Ltd

Israel . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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400

-

-

-

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Rutronik

Germany . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.287

100

-

-

-

$0.287

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,738 parts In-Stock

1+ parts

$0.170

100+ parts

$0.166

1k+ parts

$0.165

10k+ parts

-

3,738

$0.170

$0.166

$0.165

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.267

100+ parts

-

1k+ parts

$0.256

10k+ parts

-

50

$0.267

-

$0.256

-

Corohmni

South Africa . 709 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

-

709

$0.272

-

-

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Argo Parts USA

USA . 2,688 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

$0.264

2,688

$0.272

-

-

$0.264

Component Stockers USA

USA . 3,690 parts In-Stock

1+ parts

$0.590

100+ parts

$0.350

1k+ parts

$0.250

10k+ parts

-

3,690

$0.590

$0.350

$0.250

-

Continental Prestige Electronics

USA . 151 parts In-Stock

1+ parts

$0.650

100+ parts

$0.381

1k+ parts

$0.236

10k+ parts

$0.221

151

$0.650

$0.381

$0.236

$0.221

Aztec Data Supply Inc.

USA . 2,848 parts In-Stock

1+ parts

$0.931

100+ parts

-

1k+ parts

-

10k+ parts

-

2,848

$0.931

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.779

100+ parts

$1.619

1k+ parts

$1.459

10k+ parts

-

500

$1.779

$1.619

$1.459

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Metaverse IC Inc.

Canada . 111,000 parts In-Stock

1+ parts

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100+ parts

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111,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Lixinc

USA . 14,956 parts In-Stock

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14,956

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QUARKTWIN TECHNOLOGY LTD

USA . 12,187 parts In-Stock

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12,187

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Glotronic Ltd.

UK . 85 parts In-Stock

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85

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Overview

Unlock the power of innovation with the ZTX453STZ by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated prioritizes quality and reliability, ensuring that each product delivers exceptional performance. The ZTX453STZ falls under the category of Small Signal Bipolar Junction Transistors (BJT), making it perfect for switching applications. Its NPN polarity and single configuration make it versatile and easy to use. With a maximum collector-emitter voltage of 100V and a maximum collector current of 1A, this transistor offers immense value and benefits to customers. Whether you're looking to optimize your electronics or design cutting-edge projects, the ZTX453STZ is the solution you need. Trust in Diodes Incorporated's commitment to excellence and let the ZTX453STZ transform your innovations into reality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures the transistor's durability and resistance to external factors, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient signal amplification and switching, making this transistor ideal for various electronic circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration, which is beneficial for compact electronic devices and systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and fast switching performance, making it suitable for numerous electronic switching circuits and systems.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and soldering onto PCBs, providing efficient assembly and reliability in electronic systems.

Terminal Form: WIRE

The wire terminals enable easy connection and soldering, ensuring a secure and reliable electrical connection.

No. of Elements: 1

With a single element, this transistor simplifies circuit design and reduces component count, leading to cost-effective and space-saving solutions.

No. of Terminals: 3

The three terminals enable easy integration into electronic circuits, offering flexibility and versatility in design.

Package Style (Meter): IN-LINE

The in-line package style allows for efficient installation and compatibility with various electronic appliances and systems.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures efficient signal amplification, providing stable and accurate performance in various applications.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum collector-emitter voltage rating of 100 V, this transistor can handle higher voltage levels, expanding its usability in different circuit designs.

Transistor Element Material: SILICON

The silicon material used in the transistor element offers excellent conductivity and temperature stability, resulting in consistent performance and reliability.

Maximum Collector Current (IC): 1 A

The high maximum collector current of 1 A allows this transistor to handle higher current applications, making it suitable for power amplification and switching circuits.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals enhances solderability and prevents oxidation, ensuring a reliable and long-lasting connection.

Terminal Position: SINGLE

The single terminal position simplifies assembly and installation, offering convenience and ease of use in various electronic applications.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures safe soldering and prevents damage to the transistor during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, providing reliability and durability.

Nominal Transition Frequency (fT): 150 MHz

The nominal transition frequency of 150 MHz indicates the maximum frequency at which this transistor can reliably amplify signals, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX453STZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX453STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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