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ZTX458STOB

Diodes Incorporated

ZTX458STOB by Diodes Incorporated

ZTX458STOB by Diodes Inc. is a NPN BJT transistor with hFE of 15, VCE of 400V, and IC of 0.3A. Ideal for switching applications due to its high voltage tolerance and current capacity. Its silicon element ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,623 parts In-Stock

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1,623

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Nova Conductors

Japan . 19 parts In-Stock

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19

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Corohmni

South Africa . 1,245 parts In-Stock

1+ parts

$0.913

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1,245

$0.913

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Aztec Data Supply Inc.

USA . 2,168 parts In-Stock

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$1.660

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2,168

$1.660

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AZTECH Wire

Italy . 360 parts In-Stock

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$16.992

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360

$16.992

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Semicontronic

India . 1,338 parts In-Stock

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$34.050

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$33.199

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$33.028

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1,338

$34.050

$33.199

$33.028

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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20,000

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Glotronic Ltd.

UK . 5,400 parts In-Stock

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5,400

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Continental Prestige Electronics

USA . 2,286 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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1,000

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Argo Parts USA

USA . 241 parts In-Stock

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241

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Overview

Looking for a reliable solution for your switching applications? Look no further than the ZTX458STOB by Diodes Incorporated. With its high-quality construction and superior performance, this NPN transistor offers unmatched value and benefits to our customers. Trust in the expertise of Diodes Incorporated, a leading manufacturer in the industry, to deliver a product that meets your needs. Whether you're working on automotive, industrial, or consumer electronics projects, the ZTX458STOB is the perfect choice for all your small signal bipolar junction transistor needs. Experience the difference with Diodes Incorporated today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it ideal for long-term usage.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other NPN components in a circuit, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in wiring arrangements.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easy mounting and placement in various circuit designs.

Terminal Form: WIRE

Wire terminals provide a secure connection and flexibility in circuit layout, ensuring stable operation.

No. of Terminals: 3

With three terminals, this transistor is easy to connect and integrate into a circuit setup.

Package Style: IN-LINE

The in-line package style saves space on a circuit board, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 ensures consistent and reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 400 V

The high maximum voltage tolerance of 400V makes this transistor suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon offers high performance and reliability, making this transistor a durable and efficient choice.

Maximum Collector Current (IC): 0.3 A

With a maximum collector current of 0.3A, this transistor can handle moderate current loads effectively.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and reliable contact for long-lasting performance.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper orientation during installation.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for fast response times and efficient signal processing in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX458STOB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX458STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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