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ZTX453M1

Diodes Incorporated

ZTX453M1 by Diodes Incorporated

ZTX453M1 by Diodes Inc. is a NPN BJT transistor with max. Vce of 100V and max. Ic of 1A, ideal for switching applications. With hFE ≥ 10 and fT = 150MHz, this SOT-23 transistor in plastic package offers high performance in compact designs with surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 892 parts In-Stock

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892

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Nova Conductors

Japan . 69 parts In-Stock

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69

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 415 parts In-Stock

1+ parts

$7.934

100+ parts

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415

$7.934

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Enhance your electronic designs with the ZTX453M1 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 100V and a maximum collector current of 1A. With a minimum DC current gain of 10 and a nominal transition frequency of 150MHz, this NPN transistor provides outstanding performance. Trust the ZTX453M1 to deliver excellent results in your projects, making it a valuable asset for any electronic enthusiast or professional.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in low-power applications, making this transistor suitable for a variety of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation in on/off circuit functions.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and space in electronic devices.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels, making it versatile for various applications.

Maximum Collector Current (IC): 1 A

The high collector current rating enables the transistor to handle larger currents, providing flexibility for different load requirements.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency ensures fast switching speeds and high-frequency performance, making this transistor suitable for applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX453M1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX453M1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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