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ZTX451STOB

Zetex Plc

ZTX451STOB by Zetex Plc

ZTX451STOB by Zetex Plc is a NPN BJT transistor for switching applications. With VCEsat of 0.35V, hFE of 10, and IC of 1A, it operates at max temp of 200°C. Its package style is IN-LINE with 3 terminals and can handle up to 2W power dissipation.

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Overview

Unlock the power of innovation with the ZTX451STOB by Zetex Plc. This small signal bipolar junction transistor is a game-changer in the field of switching applications. With a maximum VCEsat of 0.35V and a minimum DC current gain of 10, this NPN transistor delivers exceptional performance and reliability. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the ZTX451STOB is the perfect choice. Trust Zetex Plc's reputation for quality and precision engineering, and experience the unmatched value and benefits that this product brings to your applications. Upgrade to the ZTX451STOB today and take your projects to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as a package body material makes this product lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching applications and is commonly used in amplification circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, saving space and reducing complexity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for high-speed electronic devices.

Maximum VCEsat: 0.35 V

With a low maximum VCEsat of 0.35V, this transistor minimizes power loss and enhances energy efficiency in operation.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and soldering, enhancing the overall usability of the transistor.

Terminal Form: WIRE

The wire terminal form allows for secure connections and easy installation in circuitry.

No. of Terminals: 3

The 3 terminals provide versatile connectivity options, allowing for flexibility in circuit design.

Package Style (Meter): IN-LINE

The in-line package style makes it easy to incorporate this transistor into existing circuit layouts.

Maximum Power Dissipation Ambient: 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures consistent performance and reliable amplification in circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C allows for reliable performance in extreme environments.

Maximum Collector-Base Capacitance: 15 pF

The low maximum collector-base capacitance of 15pF reduces signal distortion, ensuring accurate signal amplification.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle a wide range of voltage levels in circuits.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high reliability and performance in various operating conditions.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle high current applications with ease.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures long-term durability in various environments.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper orientation in circuit layouts.

Reference Standard: CECC

Compliant with the CECC reference standard, this transistor meets industry quality and performance benchmarks.

Nominal Transition Frequency (fT): 150 MHz

With a nominal transition frequency of 150MHz, this transistor offers fast response times and is ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX451STOB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Zetex Plc

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.35 V

Trade Compliance

ZTX451STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

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