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ZTX451M1

Diodes Incorporated

ZTX451M1 by Diodes Incorporated

ZTX451M1 by Diodes Inc. is a NPN BJT transistor with max. VCE of 60V, IC of 1A, and fT of 150MHz. Ideal for switching applications in small outline packages due to its high DC gain and silicon material composition.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,288 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 2,257 parts In-Stock

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$1.407

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$1.407

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Corohmni

South Africa . 100 parts In-Stock

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$1.460

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100

$1.460

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AZTECH Wire

Italy . 542 parts In-Stock

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$7.434

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542

$7.434

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Continental Prestige Electronics

USA . 6,952 parts In-Stock

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6,952

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Argo Parts USA

USA . 4,491 parts In-Stock

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Bastille Electronics

Australia . 30 parts In-Stock

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Overview

Delivering unrivaled performance and reliability, the ZTX451M1 by Diodes Incorporated is a game-changer in the world of Small Signal Bipolar Junction Transistors (BJT). With a focus on quality and innovation, Diodes Incorporated has crafted a product that exceeds industry standards and offers unmatched value to customers. Ideal for switching applications, this NPN transistor boasts a maximum collector-emitter voltage of 60V and a maximum collector current of 1A. Whether you are in need of precise control or efficient power management, the ZTX451M1 is the solution you've been looking for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures durability and protection for the transistor, allowing it to withstand various environmental conditions.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and reliable performance in turning circuits on and off.

Surface Mount: YES

The surface mount capability makes it easy to mount and solder onto circuit boards, saving space and allowing for automated assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package enables efficient placement on circuit boards and facilitates heat dissipation.

Terminal Form: GULL WING

The gull wing terminal form provides a secure connection and easy soldering, ensuring reliable electrical contact.

No. of Terminals: 3

With three terminals, this transistor is easy to connect in circuits and offers flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures consistent and stable amplification performance in various applications.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60V allows for reliable operation in systems with higher voltage requirements.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability, stability, and performance in electronic devices.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate current loads in a variety of circuit applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and provides a clear orientation for connection in the circuit.

Nominal Transition Frequency (fT): 150 MHz

The nominal transition frequency of 150 MHz indicates the speed and efficiency of the transistor in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX451M1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX451M1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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