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ZTX451STZ

Diodes Incorporated

ZTX451STZ by Diodes Incorporated

ZTX451STZ by Diodes Inc. is a NPN BJT transistor with hFE of 10, VCE of 60V, and IC of 1A. Ideal for switching applications due to its high transition frequency of 150MHz. Comes in an IN-LINE package style with matte tin finish for single terminal connection.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,271 parts In-Stock

1+ parts

$1.000

100+ parts

$0.407

1k+ parts

$0.284

10k+ parts

$0.263

2,271

$1.000

$0.407

$0.284

$0.263

DigiKey

USA . 756 parts In-Stock

1+ parts

$1.100

100+ parts

$0.452

1k+ parts

$0.350

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-

756

$1.100

$0.452

$0.350

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Verical

USA . 2,000 parts In-Stock

1+ parts

-

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$0.200

2,000

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-

$0.200

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.272

100+ parts

-

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50

$0.272

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Chip Stock

USA . 19,775 parts In-Stock

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19,775

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ACDS - Activité Composants Distribution Service

France . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 983 parts In-Stock

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983

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 881 parts In-Stock

1+ parts

$0.170

100+ parts

$0.166

1k+ parts

$0.165

10k+ parts

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881

$0.170

$0.166

$0.165

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Aztec Data Supply Inc.

USA . 450 parts In-Stock

1+ parts

$0.267

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450

$0.267

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Corohmni

South Africa . 117 parts In-Stock

1+ parts

$0.272

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117

$0.272

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Continental Prestige Electronics

USA . 5,616 parts In-Stock

1+ parts

$0.272

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$0.267

5,616

$0.272

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$0.267

Argo Parts USA

USA . 1,116 parts In-Stock

1+ parts

$0.272

100+ parts

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10k+ parts

$0.264

1,116

$0.272

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$0.264

Netroflash

USA . 100 parts In-Stock

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$0.272

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100

$0.272

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Perfect Parts

USA . 49,280 parts In-Stock

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49,280

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Cyclops Electronics Ltd (Excess)

UK . 18,000 parts In-Stock

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18,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Metaverse IC Inc.

Canada . 1,379 parts In-Stock

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1,379

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Overview

Enhance your electronic designs with the ZTX451STZ from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability in their products. The ZTX451STZ is a small signal NPN transistor perfect for various switching applications. With a high DC current gain and maximum collector-emitter voltage of 60V, this transistor offers exceptional performance and durability. Trust Diodes Incorporated to provide you with the tools you need to take your projects to the next level. Upgrade to the ZTX451STZ and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and fast switching speeds.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such circuits.

Terminal Form: WIRE

Wire terminals are easy to solder and provide a secure connection, enhancing the reliability of the transistor.

Maximum Collector-Emitter Voltage: 60 V

Allows for high voltage operation, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 1 A

Can handle higher currents, making it suitable for applications that require higher power levels.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX451STZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX451STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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