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ZTX451L

Diodes Incorporated

ZTX451L by Diodes Incorporated

ZTX451L by Diodes Inc. is a NPN BJT transistor with max. 60V VCE, 1A IC, and min. hFE of 10. Ideal for switching applications due to its high transition frequency of 150MHz. Packaged in plastic/epoxy with wire terminals, it's widely used in CECC standard circuits.

Median Price

$229.280

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 45 parts In-Stock

1+ parts

-

100+ parts

$229.280

1k+ parts

$207.960

10k+ parts

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45

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$229.280

$207.960

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Distributors (In-Stock)

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Nova Conductors

Japan . 92 parts In-Stock

1+ parts

$207.960

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-

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92

$207.960

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Vyrian

USA . 333 parts In-Stock

1+ parts

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333

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 452 parts In-Stock

1+ parts

$0.576

100+ parts

-

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452

$0.576

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Aztec Data Supply Inc.

USA . 2,192 parts In-Stock

1+ parts

$1.185

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2,192

$1.185

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AZTECH Wire

Italy . 333 parts In-Stock

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$16.934

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333

$16.934

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Continental Prestige Electronics

USA . 6,858 parts In-Stock

1+ parts

$207.960

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$203.801

6,858

$207.960

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$203.801

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$207.960

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1,000

$207.960

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Argo Parts USA

USA . 2,285 parts In-Stock

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2,285

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Overview

Enhance your electronic designs with the ZTX451L by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated delivers reliable solutions for a variety of applications. The ZTX451L is a Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 150 MHz, this NPN transistor provides value and efficiency to your projects. Upgrade your circuits with the ZTX451L and experience the benefits of superior design and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise.

Configuration: SINGLE

Simplified design and wiring with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Easy to mount and integrate into circuit designs with a rectangular package shape.

Terminal Form: WIRE

Wire terminals allow for easy connections and soldering in various electronic circuits.

Maximum Collector-Emitter Voltage: 60 V

With a high voltage rating, this transistor can handle higher voltage applications reliably.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 1 A

Capable of handling higher current loads, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX451L attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX451L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-340-5653, 5961123405653

NIIN

123405653

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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