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2N3903/D26Z

National Semiconductor

2N3903/D26Z by National Semiconductor

2N3903/D26Z by National Semiconductor is a NPN BJT transistor with VCEsat of 0.2V, hFE of 50, and IC of 0.2A. Ideal for switching applications due to its fast ton of 70ns and toff of 225ns. With a max VCE of 40V and fT of 250MHz, it offers reliable performance in various electronic circuits.

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Overview

Enhance your electronic projects with the reliable 2N3903/D26Z from National Semiconductor. This small signal bipolar junction transistor (BJT) offers superior quality and performance, making it perfect for switching applications. With a maximum VCEsat of 0.2V and a nominal transition frequency of 250 MHz, this NPN transistor provides fast response times and efficient operation. Trust National Semiconductor's expertise in semiconductor manufacturing to deliver a top-notch product that meets your needs. Upgrade your circuits today with the 2N3903/D26Z and experience the benefits of high-quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed for efficient switching of signals, making it ideal for applications that require rapid on/off transitions.

Maximum VCEsat: 0.2 V

Low collector-emitter saturation voltage minimizes power dissipation and improves efficiency.

Terminal Form: THROUGH-HOLE

Easy and secure mounting on a PCB.

No. of Terminals: 3

Simplifies the connection process and reduces the chance of wiring errors.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation in a wide range of voltage applications.

Maximum Collector Current (IC): 0.2 A

Can handle relatively high currents for its size.

Nominal Transition Frequency (fT): 250 MHz

Provides high-speed performance suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3903/D26Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor

Specs

Additional Features:

HIGH SPEED SATURATED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

225 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.2 V

Trade Compliance

2N3903/D26Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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