Loading...

NO Small Signal Bipolar Junction Transistors (BJT) 481

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BF422,116 by NXP Semiconductors

BF422,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .05 A;

.05 A

1.6 pF

250 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

.6 V

BF423,112 by NXP Semiconductors

BF423,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .05 A;

.05 A

1.6 pF

250 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

.6 V

BF423,116 by NXP Semiconductors

BF423,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .05 A;

.05 A

1.6 pF

250 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

.6 V

MPS3906,126 by NXP Semiconductors

MPS3906,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

40 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

700 ns

100 ns

.4 V

MPSA06,116 by NXP Semiconductors

MPSA06,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA06,126 by NXP Semiconductors

MPSA06,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA06,412 by NXP Semiconductors

MPSA06,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA42,116 by NXP Semiconductors

MPSA42,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSA42,126 by NXP Semiconductors

MPSA42,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSA42,412 by NXP Semiconductors

MPSA42,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSA43,116 by NXP Semiconductors

MPSA43,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

4 pF

200 V

SINGLE

40

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSA56,116 by NXP Semiconductors

MPSA56,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

.25 V

MPSA92,116 by NXP Semiconductors

MPSA92,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

6 pF

300 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

.5 V

MPSA92,126 by NXP Semiconductors

MPSA92,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

300 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

.5 V

MPSA92,412 by NXP Semiconductors

MPSA92,412

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

6 pF

300 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

.5 V

PBSS4140S,126 by NXP Semiconductors

PBSS4140S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Package Shape: ROUND;

1 A

40 V

SINGLE

200

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS5140S,126 by NXP Semiconductors

PBSS5140S,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

1 A

40 V

SINGLE

160

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PDTA114TS,126 by NXP Semiconductors

PDTA114TS,126

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Package Style (Meter): CYLINDRICAL; Peak Reflow Temperature (C): NOT SPECIFIED;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTA124ES,126 by NXP Semiconductors

PDTA124ES,126

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Package Shape: ROUND; JEDEC-95 Code: TO-92;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTA144ES,126 by NXP Semiconductors

PDTA144ES,126

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTC114ES,126 by NXP Semiconductors

PDTC114ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTC124ES,126 by NXP Semiconductors

PDTC124ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; JEDEC-95 Code: TO-92;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTC144ES,126 by NXP Semiconductors

PDTC144ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PH2369,112 by NXP Semiconductors

PH2369,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PN2222A,116 by NXP Semiconductors

PN2222A,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,126 by NXP Semiconductors

PN2222A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,412 by NXP Semiconductors

PN2222A,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2907A,126 by NXP Semiconductors

PN2907A,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

2PC1815GR,116 by NXP Semiconductors

2PC1815GR,116

NXP Semiconductors

NXP Semiconductors' 2PC1815GR,116 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max operating temp of 150°C and fT of 80MHz. The package is cylindrical with through-hole terminals, making it suitable for various electronic circuits.

.15 A

3.5 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

PH2369,116 by NXP Semiconductors

PH2369,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PN2907A,116 by NXP Semiconductors

PN2907A,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

365 ns

40 ns

1.6 V

2N4401-AP by Micro Commercial Components

2N4401-AP

Micro Commercial Components

2N4401-AP by Micro Commercial Components is a NPN BJT transistor with max. collector-emitter voltage of 40V, min. DC current gain of 40, and transition frequency of 250MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.6 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

250 MHz

255 ns

35 ns

2SC3279-L-AP by Micro Commercial Components

2SC3279-L-AP

Micro Commercial Components

2SC3279-L-AP by Micro Commercial Components is a NPN BJT with hFE of 140 and fT of 150 MHz. It operates at up to 150°C, handles a max voltage of 10V, and max current of 2A. Ideal for small signal applications in electronics due to its high transition frequency and current capacity.

2 A

10 V

SINGLE

140

TO-92

O-PBCY-W3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

150 MHz

BC546B-AP by Micro Commercial Components

BC546B-AP

Micro Commercial Components

BC546B-AP by Micro Commercial Components is a NPN bipolar junction transistor (BJT) with a min DC current gain of 200. It is commonly used as an amplifier in various applications. With a max operating temperature of 150°C and a max collector-emitter voltage of 65V, it offers reliable performance.

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

300 MHz

MPSA92-AP by Micro Commercial Components

MPSA92-AP

Micro Commercial Components

MPSA92-AP by Micro Commercial Components is a PNP BJT with hFE of 80, VCE of 300V, and fT of 50MHz. Ideal for low-power applications in electronics due to its high voltage and current capabilities.

.3 A

300 V

SINGLE

80

TO-92

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

NO

Matte Tin (Sn)

WIRE

BOTTOM

10

SILICON

50 MHz

2SC1815-GR-AP by Micro Commercial Components

2SC1815-GR-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-GR-AP is a NPN BJT transistor with hFE of 120, ideal for amplifier applications. With a max VCE of 50V and IC of 0.15A, it operates up to 125°C. Featuring a fT of 80MHz, this through-hole transistor has a cylindrical package body suitable for various electronic designs.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-AP by Micro Commercial Components

2SC1815-Y-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-AP is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. Package style is cylindrical with matte tin finish in a plastic/epoxy body.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-BP by Micro Commercial Components

2SC1815-Y-BP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-BP is a NPN BJT with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. The transistor's cylindrical package with matte tin finish makes it suitable for through-hole mounting.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

PN2222ARLRA by Onsemi

PN2222ARLRA

Onsemi

PN2222ARLRA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz). Package style: cylindrical, terminals: 3 through-hole bottom tin lead.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

PN2222ARLRP by Onsemi

PN2222ARLRP

Onsemi

PN2222ARLRP by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 75. It is used for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating at up to 150°C, it offers a transition frequency of 300MHz for efficient performance in various electronic circuits.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

STX13003 by STMicroelectronics

STX13003

STMicroelectronics

STX13003 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1.5W and max. collector current of 1A, suitable for circuits requiring high voltage and current handling capabilities in a cylindrical package style.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

2SA1038STPR by ROHM

2SA1038STPR

ROHM

ROHM 2SA1038STPR is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 180, suitable for amplifier applications due to its high transition frequency of 140MHz and power dissipation of 0.3W.

.05 A

120 V

SINGLE

180

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

2SA1038STPS by ROHM

2SA1038STPS

ROHM

ROHM 2SA1038STPS is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 270, suitable for amplifier applications with a nominal transition frequency of 140MHz.

.05 A

120 V

SINGLE

270

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

BC488BRL1 by Onsemi

BC488BRL1

Onsemi

BC488BRL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. It has a min DC current gain of 15, making it suitable for switching applications due to its high transition frequency of 150MHz. The transistor comes in a cylindrical package with through-hole terminals, ideal for various electronic circuits requiring low-power amplification or signal processing.

EUROPEAN PART NUMBER

1 A

60 V

SINGLE

15

TO-92

O-PBCY-T3

e0

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

BC639-16ZL1 by Onsemi

BC639-16ZL1

Onsemi

BC639-16ZL1 by Onsemi is a NPN BJT with max. power dissipation of 0.8W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, suitable for temperatures up to 150 °C and operating at a nominal transition frequency of 200MHz.

EUROPEAN PART NUMBER

1 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.8 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

61095 by Micropac Industries

61095

Micropac Industries

Micropac Industries' 61095 is a PNP BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. Features include max. power dissipation of 0.4W, min. DC current gain of 100, and max. operating temp of 200°C. Package style is cylindrical with wire terminals in a round shape.

.6 A

60 V

SINGLE

100

TO-18

O-MBCY-W3

1

3

200 Cel

METAL

ROUND

CYLINDRICAL

PNP

.4 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

SWITCHING

SILICON

300 ns

45 ns

STX715 by STMicroelectronics

STX715

STMicroelectronics

STX715 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages up to 80 V. Ideal for efficient circuit designs with its cylindrical package and through-hole terminals.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

2N4125BU by Fairchild Semiconductor

2N4125BU

Fairchild Semiconductor

2N4125BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at a max temp of 150°C with a max collector current of 0.2A.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON