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MPS3906,126

NXP Semiconductors

MPS3906,126 by NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

4,000

-

$0.040

$0.033

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,413 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

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4,413

$0.031

-

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Vyrian

USA . 2,597 parts In-Stock

1+ parts

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2,597

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Anansix

USA . 1,087 parts In-Stock

1+ parts

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1,087

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,899 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

-

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3,899

$0.028

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Corphita

USA . 1,473 parts In-Stock

1+ parts

$0.030

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-

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1,473

$0.030

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.611

100+ parts

$1.595

1k+ parts

$1.530

10k+ parts

-

100

$1.611

$1.595

$1.530

-

AZTECH Wire

Italy . 978 parts In-Stock

1+ parts

$10.280

100+ parts

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978

$10.280

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UNI Independent Distributors

Spain . 6,756 parts In-Stock

1+ parts

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6,756

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Microchip USA

USA . 5,415 parts In-Stock

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5,415

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QUARKTWIN TECHNOLOGY LTD

USA . 2,834 parts In-Stock

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2,834

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3906,126 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

700 ns

Maximum Turn On Time (ton):

100 ns

Maximum VCEsat:

.4 V

Trade Compliance

MPS3906,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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