Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2N3906ZL1G
Onsemi
2N3906ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (70ns/300ns) and high transition frequency (250MHz).
EUROPEAN PART NUMBER
.2 A
40 V
SINGLE
30
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
PNP
.35 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
SWITCHING
SILICON
250 MHz
300 ns
70 ns
2N4124G
2N4124G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 60, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.2A in a cylindrical package shape.
25 V
60
NPN
300 MHz
2N4401RLRMG
2N4401RLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
.6 A
40
1.5 W
255 ns
35 ns
2N4403RLG
2N4403RLG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
100
200 MHz
2N5087RLRAG
2N5087RLRAG by Onsemi is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.
LOW NOISE
.05 A
50 V
250
AMPLIFIER
40 MHz
2N5088G
2N5088G by Onsemi is a NPN BJT with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150°C in a cylindrical package with through-hole terminals.
30 V
350
50 MHz
2N5088RLRAG
2N5088RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150 °C in a cylindrical package style.
2N5401RL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .6 A;
150 V
50
.63 W
100 MHz
2N5401RLRMG
2N5401ZL1G
2N5401ZL1G by Onsemi is a PNP BJT with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is used in amplifier applications due to its high transition frequency of 100MHz and max power dissipation of 0.63W.
2N5550G
2N5550G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 20, and max. collector-emitter voltage of 140V. It is commonly used in amplifier applications due to its single configuration and cylindrical package style.
140 V
20
2N5551RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
160 V
2N5551RLRMG
2N5551RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 160V, max. collector current of 0.6A, and min. DC current gain of 30. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance at up to 150 °C operating temperature.
2N6426RLRAG
2N6426RLRAG by Onsemi is a NPN Darlington transistor with max. collector-emitter voltage of 40V and max. collector current of 0.5A. It has a min. DC current gain of 20,000 and nominal transition frequency of 125MHz, making it ideal for amplifier applications due to its high power dissipation capability of 0.625W.
.5 A
DARLINGTON
20000
.625 W
125 MHz
2N6427G
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
14000
130 MHz
2N6515RLRMG
2N6515RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for switching applications. It has a min. DC current gain of 25 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.
250 V
25
3500 ns
200 ns
2N6517G
2N6517G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V and max. collector current of 0.5A. It has a min. DC current gain of 15, making it suitable for switching applications with a max. power dissipation of 0.625W. The transistor operates at up to 150 °C and has a nominal transition frequency of 40MHz, ideal for high-speed switching circuits.
350 V
15
2N6517RLRAG
2N6517RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used for switching applications due to its single configuration and cylindrical package style, operating at a max temp of 150 °C.
2N6517RLRPG
2N6517RLRPG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, ideal for switching applications. It has a min. DC current gain of 15 and max. operating temp. of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.
BC182BG
BC182BG by Onsemi is a NPN BJT transistor with hFE of 180, ideal for amplifier applications. It has a max power dissipation of 0.35W and operates at up to 150 °C. With a max collector-emitter voltage of 50V and fT of 200MHz, it's suitable for various electronic designs.
.1 A
180
BC212BG
BC212BG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1W, and hFE of 60. Ideal for amplifier applications, it has a max operating temp of 150 °C and VCE of 50V.
TO-226AA
1 W
280 MHz
BC212BRL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;
Tin/Silver/Copper (Sn/Ag/Cu)
BC237BG
BC237BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for amplifier applications. Featuring a min. DC current gain of 200 and nominal transition frequency of 200MHz, it comes in a cylindrical package with through-hole terminals for easy installation.
45 V
200
BC237CG
BC237CG by Onsemi is a NPN BJT transistor with hFE of 380, VCE of 45V, and fT of 200MHz. Ideal for amplifier applications due to its 0.35W power dissipation, it has a single configuration in a cylindrical package with through-hole terminals. Operating up to 150 °C, it is suitable for various electronic designs.
380
BC239CG
BC239CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 380 and can handle a max collector current of 0.1 A. With a max operating temperature of 150 °C, it offers a nominal transition frequency of 280 MHz.
BC327-16ZL1G
BC327-16ZL1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 45V and max current of 0.8A. Ideal for amplifier applications, it has a min DC current gain of 100 and operates up to 150 °C. Its package style is cylindrical with through-hole terminals.
.8 A
260 MHz
BC327-25ZL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;
160
BC327RL1G
BC327RL1G by Onsemi is a PNP BJT transistor with hFE of 100, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications due to its cylindrical package style and max operating temperature of 150 °C. Its silicon element material ensures reliable performance in various electronic circuits.
BC337-16RL1G
BC337-16RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. Ideal for amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A in a cylindrical package style.
210 MHz
BC337ZL1G
BC337ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. It is commonly used in amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A, making it suitable for various electronic circuits requiring signal amplification.
BC338-25ZL1G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A;
BC368G
BC368G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1.5W, hFE of 85, and operates up to 150 °C. With a max VCE of 20V and IC of 1A, it offers reliable performance in various electronic circuits.
1 A
20 V
85
65 MHz
BC372G
BC372G by Onsemi is a NPN Darlington transistor with 3 terminals and a max power dissipation of 0.625W. With a min DC current gain of 8000, it operates at temperatures up to 150 °C. Ideal for applications requiring high collector current and transition frequency up to 200MHz in small signal circuits.
100 V
8000
BC373G
BC373G by Onsemi is a NPN Darlington transistor with 8000 min DC current gain, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 1A of collector current. With a nominal transition frequency of 200MHz, it operates b/w -55 °C to 150°C effectively in various electronic circuits.
80 V
-55 Cel
BC447G
BC447G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor with hFE of at least 50, operating up to 150 °C, and featuring a nominal transition frequency of 200MHz.
.3 A
BC489G
BC489G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 15, and max. operating temp of 150 °C. Ideal for switching applications due to its max. collector-emitter voltage of 80V and max. collector current of 0.5A in a cylindrical package style suitable for through-hole mounting.
BC490G
BC490G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 1.5W, hFE of 15, and can handle up to 80V collector-emitter voltage. With a max operating temp of 150°C and fT of 150MHz, it's suitable for various electronic circuits requiring high-speed switching capabilities.
150 MHz
BC517RL1G
BC517RL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE max of 30V and IC max of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
30000
BC517ZL1G
BC517ZL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE of 30V and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
BC547ARL1G
BC547ARL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a min. DC current gain of 110, ideal for amplifier applications due to its high transition frequency of 300MHz and max. power dissipation of 0.625W in a cylindrical package style.
110
BC547CZL1G
BC547CZL1G by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150°C and fT of 300MHz in a cylindrical package.
420
BC549CG
BC549CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 420 and can handle a max IC of 0.1A. With a max operating temperature of 150°C, it offers a transition frequency of 250MHz in a cylindrical package suitable for through-hole mounting.
BC550CG
BC550CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 420 and can handle a max collector current of 0.1A. With a max operating temperature of 150°C and a collector-emitter voltage of 45V, it is suitable for various electronic projects.
BC560CG
BC560CG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 380, and operates up to 150°C. With a VCE of 45V and IC of 0.1A, it offers high performance in a cylindrical package suitable for through-hole mounting.
BC560CZL1G
BC560CZL1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 380, and max. power dissipation of 0.625W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 45V and operates up to 150°C.
BC618G
BC618G by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
55 V
4000
BC635RL1G
BC635RL1G by Onsemi is a NPN BJT with 45V VCEO, 1A IC, and 200MHz fT. Ideal for low-power applications, it comes in a cylindrical package with through-hole terminals. With a min hFE of 40 and max operating temp of 150 °C, it's suitable for various electronic designs.
BC635ZL1G
BC635ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 45V, max. collector current of 1A, and min. DC current gain of 40. It is used in applications requiring small signal amplification in electronic circuits due to its high transition frequency of 200MHz and max. power dissipation of 0.625W.
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