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BC489G

Onsemi

BC489G by Onsemi

BC489G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 15, and max. operating temp of 150 °C. Ideal for switching applications due to its max. collector-emitter voltage of 80V and max. collector current of 0.5A in a cylindrical package style suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 9,926 parts In-Stock

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Digiode

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Native Components

USA . 949 parts In-Stock

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$8.252

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Northwest PG Solutions

USA . 549 parts In-Stock

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$8.169

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AZTECH Wire

Italy . 580 parts In-Stock

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$12.500

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Problanco Electronics

Mexico . 6,705 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 2,950 parts In-Stock

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TANS Electronics

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Corphita

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Corohmni

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UHIMA Technologies

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Overview

Enhance your electronic projects with the BC489G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor provides reliability and efficiency in a compact package. With a minimum DC current gain of 15 and a maximum operating temperature of 150 °C, the BC489G is versatile and durable. Whether you're creating a new circuit or upgrading an existing design, this transistor's superior performance and affordable price make it a valuable addition to any project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Offers improved performance and reliability in NPN switching circuits.

Configuration: SINGLE

Simplified design and easier integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling power efficiently without overheating.

Maximum Operating Temperature: 150 °C

Can operate under high temperature conditions, increasing reliability.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring high voltage handling capabilities.

Maximum Collector Current (IC): 0.5 A

Can handle relatively high current levels, making it versatile for various applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for faster switching speeds in applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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