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2N5550G

Onsemi

2N5550G by Onsemi

2N5550G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 20, and max. collector-emitter voltage of 140V. It is commonly used in amplifier applications due to its single configuration and cylindrical package style.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,106 parts In-Stock

1+ parts

$0.080

100+ parts

$0.075

1k+ parts

$0.068

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2,106

$0.080

$0.075

$0.068

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Distributors (In-Stock)

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Nova Conductors

Japan . 82 parts In-Stock

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$0.068

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82

$0.068

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Digiode

USA . 551 parts In-Stock

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$0.076

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551

$0.076

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Chip Stock

USA . 21,000 parts In-Stock

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Vyrian

USA . 6,088 parts In-Stock

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VNN

France . 4,440 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,445 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,445 parts In-Stock

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South Electronics

USA . 49 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 442 parts In-Stock

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$0.065

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442

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Argo Parts USA

USA . 3,576 parts In-Stock

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$0.068

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$0.066

3,576

$0.068

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$0.066

Ampacity Inc.

Singapore . 1,919 parts In-Stock

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$0.068

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1,919

$0.068

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Semicontronic

India . 1,661 parts In-Stock

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$0.068

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$0.066

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$0.066

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1,661

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Corphita

USA . 1,631 parts In-Stock

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$0.072

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Component Stockers USA

USA . 1,553 parts In-Stock

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$0.080

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$0.070

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$0.070

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1,553

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$0.070

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AZTECH Wire

Italy . 488 parts In-Stock

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$18.180

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488

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Perfect Parts

USA . 25,067 parts In-Stock

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SupplyDigital Components

Austria . 5,440 parts In-Stock

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TANS Electronics

Latvia . 3,529 parts In-Stock

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Problanco Electronics

Mexico . 3,515 parts In-Stock

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Kulean Microsystems

USA . 2,525 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Continental Prestige Electronics

USA . 2,106 parts In-Stock

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$0.069

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,000 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.066

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$0.064

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$0.063

500

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$0.066

$0.064

$0.063

UHIMA Technologies

Türkiye . 263 parts In-Stock

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Overview

Enhance your electronic projects with the reliable and high-quality 2N5550G small signal bipolar junction transistor from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and durability in all their products. Whether you're amplifying signals or working on audio applications, this NPN transistor offers exceptional value and benefits to customers. Trust Onsemi to deliver the best in quality and innovation for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various applications.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easy to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring reliable performance in audio or signal amplification.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards, providing a secure connection for stable operation.

No. of Terminals: 3

Simple and straightforward connection setup, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.35 W

Can handle a moderate power dissipation level, suitable for various amplification tasks without overheating.

Package Style (Meter): CYLINDRICAL

Aesthetically pleasing design with a cylindrical package style.

Minimum DC Current Gain (hFE): 20

Ensures consistent amplification performance with a minimum current gain of 20.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, making it suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 140 V

Can handle high voltage levels, ensuring compatibility with various circuit configurations.

Transistor Element Material: SILICON

Silicon offers excellent electrical properties for optimal transistor performance.

Maximum Collector Current (IC): 0.6 A

Can handle moderate current levels, suitable for many amplification applications.

Terminal Finish: TIN SILVER COPPER

Provides a reliable and durable finish for the terminals, ensuring long-term performance.

Terminal Position: BOTTOM

Allows for easy integration into circuit boards with the terminals positioned at the bottom.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 100 MHz

Capable of fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5550G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5550G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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