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2N5551T&A

Continental Device India

2N5551T&A by Continental Device India

2N5551T&A by Continental Device India is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 160V. It is used in amplifier applications due to its single configuration and cylindrical package shape with through-hole terminals.

Median Price

$0.076

Lifecycle Status

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1k+

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Nova Conductors

Japan . 800 parts In-Stock

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Vyrian

USA . 3,423 parts In-Stock

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3,423

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Continental Prestige Electronics

USA . 1,582 parts In-Stock

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$0.074

1,582

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Argo Parts USA

USA . 1,390 parts In-Stock

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$0.076

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$0.074

1,390

$0.076

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$0.074

Netroflash

USA . 100 parts In-Stock

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$0.076

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$0.072

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$0.071

100

$0.076

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$0.072

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AZTECH Wire

Italy . 534 parts In-Stock

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$14.301

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Overview

Elevate your projects with the 2N5551T&A by Continental Device India, a top-tier manufacturer known for high-quality Small Signal Bipolar Junction Transistors. Perfect for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 160V and a nominal transition frequency of 100MHz. With a sleek cylindrical package and matte tin finish, this transistor combines reliability and performance in one compact design. Trust Continental Device India for premium electronic components that deliver value and efficiency to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/ epoxy material makes the package lightweight and durable, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into circuits and compatibility with a wide range of electronic components.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to control the transistor's behavior.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and simplify soldering during circuit assembly.

No. of Terminals: 3

3 terminals offer flexibility in circuit connectivity and allow for various configurations.

Maximum Power Dissipation (Abs): 0.35 W

With a high maximum power dissipation, this transistor can handle high-power applications without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for efficient heat dissipation and space-saving design.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate in a wide range of environments without degrading performance.

Maximum Collector-Emitter Voltage: 160 V

With a high maximum collector-emitter voltage, this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material of the transistor element offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.6 A

High maximum collector current allows for handling high current applications without the risk of damage.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and reliable connections in circuit assembly.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and allows for easy integration into circuit designs.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100 MHz makes this transistor suitable for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5551T&A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5551T&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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