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2N5551TA

Onsemi

2N5551TA by Onsemi

2N5551TA by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 160V, max. collector current of 0.6A, and min. DC current gain of 30. It is commonly used in amplifier applications due to its high transition frequency of 100MHz and max power dissipation of 0.35W in a cylindrical package style.

Median Price

$0.063

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.077

100+ parts

$0.073

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$0.073

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100

$0.077

$0.073

$0.073

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Newark

USA . 8,290 parts In-Stock

1+ parts

$0.288

100+ parts

$0.110

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$0.072

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8,290

$0.288

$0.110

$0.072

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Mouser Electronics

USA . 59,896 parts In-Stock

1+ parts

$0.300

100+ parts

$0.113

1k+ parts

$0.074

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$0.061

59,896

$0.300

$0.113

$0.074

$0.061

Master Electronics

USA . 40,000 parts In-Stock

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$0.054

40,000

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$0.054

Chip1Stop

Japan . 34,000 parts In-Stock

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$0.042

34,000

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$0.042

Verical

USA . 20,000 parts In-Stock

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$0.063

20,000

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$0.063

DigiKey

USA . 17,830 parts In-Stock

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$0.055

17,830

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$0.055

Arrow

USA . 10,000 parts In-Stock

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$0.057

10,000

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Farnell

UK . 8,330 parts In-Stock

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$0.091

1k+ parts

$0.059

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8,330

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$0.091

$0.059

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Element14

Singapore . 8,330 parts In-Stock

1+ parts

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$0.148

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$0.097

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8,330

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$0.148

$0.097

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Rochester

USA . 2,085 parts In-Stock

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$0.045

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$0.038

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$0.034

2,085

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$0.045

$0.038

$0.034

Distributors (In-Stock)

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Digiode

USA . 2,262 parts In-Stock

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$0.035

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2,262

$0.035

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Nova Conductors

Japan . 50 parts In-Stock

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$0.076

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50

$0.076

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TME

Poland . 1,021 parts In-Stock

1+ parts

$0.280

100+ parts

$0.111

1k+ parts

$0.068

10k+ parts

$0.049

1,021

$0.280

$0.111

$0.068

$0.049

Component Electronics Inc.

Canada . 11,162 parts In-Stock

1+ parts

$0.500

100+ parts

$0.380

1k+ parts

$0.330

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11,162

$0.500

$0.380

$0.330

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Q Components

USA . 734,000 parts In-Stock

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734,000

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Flip Electronics

USA . 66,000 parts In-Stock

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66,000

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IBS Electronics

USA . 20,000 parts In-Stock

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$0.050

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$0.050

Vyrian

USA . 14,800 parts In-Stock

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14,800

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ACDS - Activité Composants Distribution Service

France . 10,500 parts In-Stock

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Resion

USA . 9,260 parts In-Stock

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Component Sense

UK . 8,511 parts In-Stock

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Chip Stock

USA . 7,075 parts In-Stock

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7,075

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NAC Semi

USA . 4,000 parts In-Stock

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VNN

France . 1,125 parts In-Stock

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Beckwith Electronics

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100

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Distributors (Availability)

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Corohmni

South Africa . 115 parts In-Stock

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$0.030

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115

$0.030

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Semicontronic

India . 12,701 parts In-Stock

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$0.030

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12,701

$0.031

$0.030

$0.030

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Ampacity Inc.

Singapore . 12,344 parts In-Stock

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Corphita

USA . 1,614 parts In-Stock

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$0.033

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1,614

$0.033

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Argo Parts USA

USA . 1,788 parts In-Stock

1+ parts

$0.076

100+ parts

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$0.074

1,788

$0.076

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$0.074

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.076

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1,000

$0.076

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.077

100+ parts

$0.073

1k+ parts

$0.073

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100

$0.077

$0.073

$0.073

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Continental Prestige Electronics

USA . 13,825 parts In-Stock

1+ parts

$0.335

100+ parts

$0.131

1k+ parts

$0.045

10k+ parts

$0.039

13,825

$0.335

$0.131

$0.045

$0.039

Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$0.995

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1,000

$0.995

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RC Electronics

USA . 141,166 parts In-Stock

1+ parts

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$0.080

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$0.070

10k+ parts

$0.070

141,166

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$0.080

$0.070

$0.070

Perfect Parts

USA . 124,057 parts In-Stock

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124,057

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Infinite Electronics LLP (Excess)

. 59,695 parts In-Stock

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59,695

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Metaverse IC Inc.

Canada . 32,000 parts In-Stock

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GreenTree Electronics

Israel . 31,000 parts In-Stock

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Kepictronics

USA . 18,000 parts In-Stock

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 15,474 parts In-Stock

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15,474

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Eastek

USA . 10,000 parts In-Stock

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Glotronic Ltd.

UK . 8,400 parts In-Stock

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8,400

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Allen Electronics Distributors

USA . 8,200 parts In-Stock

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$0.047

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8,200

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$0.047

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Kulean Microsystems

USA . 6,265 parts In-Stock

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6,265

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QUARKTWIN TECHNOLOGY LTD

USA . 6,114 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,919 parts In-Stock

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5,919

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Problanco Electronics

Mexico . 4,723 parts In-Stock

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4,723

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SupplyDigital Components

Austria . 2,120 parts In-Stock

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TANS Electronics

Latvia . 988 parts In-Stock

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988

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Supply Digital

USA . 895 parts In-Stock

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895

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Lixinc

USA . 802 parts In-Stock

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802

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UHIMA Technologies

Türkiye . 210 parts In-Stock

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210

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Overview

Enhance your electronic projects with the high-quality 2N5551TA transistor by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees reliability and performance. Ideal for amplifier applications, this NPN transistor offers seamless integration and superior functionality. With a maximum collector-emitter voltage of 160V and a nominal transition frequency of 100 MHz, the 2N5551TA provides unmatched value and efficiency to customers looking to elevate their designs. Trust Onsemi for top-notch components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Singe configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round shape allows for easy mounting and integration into circuit boards or other electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong physical and electrical connections, ensuring reliability in circuit applications.

No. of Terminals: 3

Three terminals provide necessary connections for amplifier circuits, making it easy to integrate into existing designs.

Maximum Power Dissipation (Abs): 0.35 W

The high power dissipation rating allows for efficient operation and reliability in various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, making it suitable for small electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures proper amplification in amplifier circuits, providing consistent performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for operation in a wide range of environments and applications.

Maximum Collector-Emitter Voltage: 160 V

A high collector-emitter voltage rating of 160V ensures reliable performance in high voltage applications.

Transistor Element Material: SILICON

Silicon material provides high conductivity and efficiency, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.6 A

A maximum collector current of 0.6A allows for high current amplification, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and reliable electrical connections, ensuring long-term performance.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and integration into circuit designs, making installation simple.

Nominal Transition Frequency (fT): 100 MHz

A high nominal transition frequency of 100MHz allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5551TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5551TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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