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BC635RL1G

Onsemi

BC635RL1G by Onsemi

BC635RL1G by Onsemi is a NPN BJT with 45V VCEO, 1A IC, and 200MHz fT. Ideal for low-power applications, it comes in a cylindrical package with through-hole terminals. With a min hFE of 40 and max operating temp of 150 °C, it's suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,829 parts In-Stock

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Digiode

USA . 1,895 parts In-Stock

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AZTECH Wire

Italy . 846 parts In-Stock

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$8.980

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$8.980

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Component Stockers USA

USA . 431 parts In-Stock

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$99.990

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431

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Problanco Electronics

Mexico . 5,744 parts In-Stock

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Kulean Microsystems

USA . 3,947 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 3,417 parts In-Stock

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SupplyDigital Components

Austria . 2,225 parts In-Stock

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Native Components

USA . 978 parts In-Stock

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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Corphita

USA . 523 parts In-Stock

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Northwest PG Solutions

USA . 464 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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Overview

Looking for a reliable solution for your small signal bipolar junction transistor needs? Look no further than the BC635RL1G by Onsemi. With a reputation for top-notch quality and performance, Onsemi delivers a superior product that is perfect for a variety of applications. From amplification to switching, this NPN transistor offers exceptional value and benefits to customers. Say goodbye to reliability issues and hello to peace of mind with the BC635RL1G. Elevate your projects with Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used type of BJT which allows for easy integration into circuit designs.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor for operation.

Package Shape: ROUND

Allows for easy mounting and placement within a circuit.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to a circuit board.

Maximum Power Dissipation (Abs): 0.625 W

Can handle higher power levels without overheating, increasing reliability.

Maximum Operating Temperature: 150 °C

Can withstand relatively high temperatures, suitable for various operating conditions.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications where high voltage switching is required.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, making it versatile for different circuit requirements.

Nominal Transition Frequency (fT): 200 MHz

Offers high-frequency performance, ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC635RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC635RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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