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BC239CG

Onsemi

BC239CG by Onsemi

BC239CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 380 and can handle a max collector current of 0.1 A. With a max operating temperature of 150 °C, it offers a nominal transition frequency of 280 MHz.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 75,000 parts In-Stock

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Vyrian

USA . 8,960 parts In-Stock

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Digiode

USA . 723 parts In-Stock

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AZTECH Wire

Italy . 709 parts In-Stock

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$19.510

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709

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Component Stockers USA

USA . 558 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 29,821 parts In-Stock

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Problanco Electronics

Mexico . 7,539 parts In-Stock

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TANS Electronics

Latvia . 6,895 parts In-Stock

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 3,393 parts In-Stock

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Corphita

USA . 2,280 parts In-Stock

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Kulean Microsystems

USA . 2,098 parts In-Stock

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Northwest PG Solutions

USA . 1,994 parts In-Stock

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Native Components

USA . 499 parts In-Stock

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UHIMA Technologies

Türkiye . 482 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Overview

Enhance your electronic projects with the Onsemi BC239CG small signal bipolar junction transistor (BJT). Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor is perfect for amplifier applications. Its high DC current gain and low power dissipation ensure optimal performance and reliability. With a maximum operating temperature of 150 °C and a peak transition frequency of 280 MHz, the BC239CG offers exceptional value and versatility for your circuit design needs. Upgrade your projects today with this top-quality component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Common type of BJT that allows for easy integration with other components.

Configuration: SINGLE

Simplified design for easy circuit integration and troubleshooting.

Transistor Application: AMPLIFIER

Ideal for amplification purposes in various electronic circuits.

Maximum Power Dissipation: 0.35 W

Ability to handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low-voltage applications.

Minimum DC Current Gain (hFE): 380

High gain value for efficient signal amplification.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Nominal Transition Frequency (fT): 280 MHz

Allows for high-speed signal processing and frequency response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC239CG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

380

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC239CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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