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BC547CZL1G

Onsemi

BC547CZL1G by Onsemi

BC547CZL1G by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150°C and fT of 300MHz in a cylindrical package.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1 parts In-Stock

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$0.028

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1

$0.028

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Rochester

USA . 88,000 parts In-Stock

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$0.110

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$0.110

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$0.110

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88,000

$0.110

$0.110

$0.110

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Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.754

100+ parts

$0.716

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$0.716

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1,000

$0.754

$0.716

$0.716

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Distributors (In-Stock)

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Digiode

USA . 2,247 parts In-Stock

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$0.025

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2,247

$0.025

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Nova Conductors

Japan . 300 parts In-Stock

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$0.072

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300

$0.072

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Chip Stock

USA . 80,000 parts In-Stock

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ComSIT USA

USA . 18,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 13,500 parts In-Stock

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13,500

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Vyrian

USA . 7,110 parts In-Stock

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Inventory MP

USA . 2,000 parts In-Stock

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Bristol Electronics

USA . 2,000 parts In-Stock

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VNN

France . 727 parts In-Stock

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Semicontronic

India . 367 parts In-Stock

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$0.022

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$0.021

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$0.021

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367

$0.022

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$0.021

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Ampacity Inc.

Singapore . 168 parts In-Stock

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$0.022

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Corphita

USA . 547 parts In-Stock

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$0.023

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547

$0.023

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Corohmni

South Africa . 488 parts In-Stock

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$0.030

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Continental Prestige Electronics

USA . 5,710 parts In-Stock

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$0.065

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$0.064

5,710

$0.065

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$0.064

Argo Parts USA

USA . 3,357 parts In-Stock

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$0.065

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$0.063

3,357

$0.065

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$0.063

Netroflash

USA . 500 parts In-Stock

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$0.072

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$0.070

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500

$0.072

$0.070

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.754

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$0.716

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$0.716

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1,000

$0.754

$0.716

$0.716

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Aztec Data Supply Inc.

USA . 3,684 parts In-Stock

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$1.582

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3,684

$1.582

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AZTECH Wire

Italy . 1,084 parts In-Stock

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$12.600

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Component Stockers USA

USA . 403 parts In-Stock

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$99.990

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Perfect Parts

USA . 51,728 parts In-Stock

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Kulean Microsystems

USA . 7,296 parts In-Stock

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Problanco Electronics

Mexico . 5,273 parts In-Stock

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TANS Electronics

Latvia . 4,206 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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SupplyDigital Components

Austria . 3,353 parts In-Stock

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UHIMA Technologies

Türkiye . 949 parts In-Stock

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949

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Overview

Unlock the power of innovation with the BC547CZL1G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor that delivers exceptional performance in amplifier applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers unparalleled quality and reliability. With a high DC current gain of 420 and a maximum collector-emitter voltage of 45V, this transistor provides superior amplification capabilities. Trust Onsemi to bring you cutting-edge technology that exceeds expectations and empowers your projects to reach new heights. Elevate your designs with the BC547CZL1G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging offers good protection for the transistor, making it durable and suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a good choice for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into a wide range of applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation: 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels without overheating.

Nominal Transition Frequency: 300 MHz

High transition frequency allows for fast response times and accurate signal amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547CZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC547CZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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