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BC635ZL1G

Onsemi

BC635ZL1G by Onsemi

BC635ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 45V, max. collector current of 1A, and min. DC current gain of 40. It is used in applications requiring small signal amplification in electronic circuits due to its high transition frequency of 200MHz and max. power dissipation of 0.625W.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,078 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

2,078

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,460 parts In-Stock

1+ parts

$0.041

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-

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1,460

$0.041

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Vyrian

USA . 8,430 parts In-Stock

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8,430

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Distributors (Availability)

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Corphita

USA . 1,967 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,967

$0.039

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Corohmni

South Africa . 173 parts In-Stock

1+ parts

$0.043

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173

$0.043

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Native Components

USA . 85 parts In-Stock

1+ parts

$6.290

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85

$6.290

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AZTECH Wire

Italy . 604 parts In-Stock

1+ parts

$21.520

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604

$21.520

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TANS Electronics

Latvia . 6,355 parts In-Stock

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6,355

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Kulean Microsystems

USA . 5,232 parts In-Stock

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5,232

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SupplyDigital Components

Austria . 2,051 parts In-Stock

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2,051

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Northwest PG Solutions

USA . 793 parts In-Stock

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$6.164

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793

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$6.164

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Problanco Electronics

Mexico . 527 parts In-Stock

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527

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UHIMA Technologies

Türkiye . 379 parts In-Stock

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379

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Overview

Enhance your electronic projects with the BC635ZL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for a variety of applications. Whether you're working on audio amplifiers, signal processing circuits, or voltage regulators, this transistor's single configuration and high DC current gain ensure optimal functionality. With a maximum collector-emitter voltage of 45V and a peak transition frequency of 200 MHz, this transistor provides exceptional value and performance for your projects. Upgrade your designs today with the BC635ZL1G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and lightweight, making the transistor easy to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications where only one transistor is required.

Package Shape: ROUND

Round package shape allows for easy mounting and placement in circuit boards, saving space and facilitating assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are suitable for manual soldering, ensuring reliability in circuit connections.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation rating, this transistor can handle greater power levels without overheating, ensuring stability in operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers mechanical robustness and facilitates heat dissipation, enhancing the overall reliability of the transistor.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capabilities, allowing for effective signal amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, ensuring reliable performance under varying conditions.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating of 45V allows for the transistor to be used in a wide range of voltage applications with stability and safety.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and durability, making this transistor highly reliable for long-term use in electronic circuits.

Maximum Collector Current (IC): 1 A

With a maximum collector current rating of 1A, this transistor can handle high current levels, making it suitable for power amplification applications.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish ensures good conductivity and solderability, providing reliable electrical connections in electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount the transistor on circuit boards and facilitates efficient heat dissipation.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C ensures secure solder joints and reliable connections during assembly and soldering processes.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency of 200MHz indicates fast switching speeds, making this transistor suitable for high-frequency applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC635ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC635ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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