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BC549CG

Onsemi

BC549CG by Onsemi

BC549CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 420 and can handle a max IC of 0.1A. With a max operating temperature of 150°C, it offers a transition frequency of 250MHz in a cylindrical package suitable for through-hole mounting.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 173,901 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

173,901

-

$0.119

$0.099

$0.088

DigiKey

USA . 173,901 parts In-Stock

1+ parts

-

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10k+ parts

$0.150

173,901

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$0.150

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.087

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-

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500

$0.087

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Digiode

USA . 1,906 parts In-Stock

1+ parts

$0.093

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1,906

$0.093

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DigiKey Marketplace

USA . 182,871 parts In-Stock

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182,871

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VNN

France . 3,989 parts In-Stock

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3,989

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Vyrian

USA . 1,995 parts In-Stock

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1,995

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ComSIT Distribution GmbH

Germany . 512 parts In-Stock

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512

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Bristol Electronics

USA . 489 parts In-Stock

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489

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Distributors (Availability)

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Ampacity Inc.

Singapore . 178,484 parts In-Stock

1+ parts

$0.083

100+ parts

-

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178,484

$0.083

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Corohmni

South Africa . 234 parts In-Stock

1+ parts

$0.085

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234

$0.085

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Argo Parts USA

USA . 512 parts In-Stock

1+ parts

$0.087

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10k+ parts

$0.084

512

$0.087

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$0.084

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.087

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100

$0.087

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Corphita

USA . 388 parts In-Stock

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$0.088

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388

$0.088

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AZTECH Wire

Italy . 811 parts In-Stock

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$10.390

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811

$10.390

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Continental Prestige Electronics

USA . 182,871 parts In-Stock

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$0.088

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182,871

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$0.088

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Perfect Parts

USA . 24,942 parts In-Stock

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Kepictronics

USA . 12,290 parts In-Stock

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Problanco Electronics

Mexico . 6,915 parts In-Stock

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Kulean Microsystems

USA . 6,652 parts In-Stock

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6,652

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A-Z Elektronik GmbH

Germany . 5,841 parts In-Stock

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5,841

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TANS Electronics

Latvia . 4,958 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,894 parts In-Stock

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3,894

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SupplyDigital Components

Austria . 1,773 parts In-Stock

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1,773

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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545

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Overview

Enhance your electronic projects with the BC549CG by Onsemi, a high-quality NPN small signal bipolar junction transistor perfect for amplifier applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this transistor offers reliable performance and durability. With a minimum DC current gain of 420 and a maximum collector-emitter voltage of 45V, this transistor provides excellent value and versatility for your circuit designs. Upgrade your amplifiers today with the BC549CG and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into existing circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring reliable performance in audio and signal processing circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency allows for efficient signal amplification in high-frequency applications, making this transistor suitable for RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC549CG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC549CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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