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BC560CZL1G

Onsemi

BC560CZL1G by Onsemi

BC560CZL1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 380, and max. power dissipation of 0.625W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 45V and operates up to 150°C.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,332 parts In-Stock

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$0.040

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$0.040

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$0.040

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5,332

$0.040

$0.040

$0.040

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Distributors (In-Stock)

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Vyrian

USA . 7,606 parts In-Stock

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7,606

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VNN

France . 3,494 parts In-Stock

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Digiode

USA . 1,306 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,921 parts In-Stock

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$1.842

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3,921

$1.842

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Ampacity Inc.

Singapore . 702 parts In-Stock

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$13.050

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702

$13.050

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AZTECH Wire

Italy . 842 parts In-Stock

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$18.126

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842

$18.126

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Kulean Microsystems

USA . 6,417 parts In-Stock

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TANS Electronics

Latvia . 6,244 parts In-Stock

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Argo Parts USA

USA . 4,488 parts In-Stock

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Continental Prestige Electronics

USA . 3,324 parts In-Stock

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Problanco Electronics

Mexico . 2,542 parts In-Stock

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Corphita

USA . 1,542 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 828 parts In-Stock

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828

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SupplyDigital Components

Austria . 503 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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Overview

Enhance your amplifier projects with the BC560CZL1G by Onsemi, a top-quality small signal bipolar junction transistor that guarantees reliable performance. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor offers exceptional value and benefits for applications requiring amplification. Its high DC current gain, low power dissipation, and wide operating temperature range make it an ideal choice for audio amplifiers, signal processing circuits, and more. Upgrade your designs with the BC560CZL1G and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as certain types of amplifier circuits.

Configuration: SINGLE

Simplified design and easy to use in circuits requiring a single transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Terminal Form: THROUGH-HOLE

Easy to solder and suitable for through-hole PCB assembly.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power levels, making it suitable for various amplifier applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring up to 45 volts of collector-emitter voltage.

Minimum DC Current Gain (hFE): 380

High DC current gain ensures efficient amplification in circuits.

Maximum Collector Current (IC): 0.1 A

Can handle up to 0.1 ampere of collector current, suitable for many amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC560CZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

380

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC560CZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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