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BC560-C

Infineon Technologies

BC560-C by Infineon Technologies

Infineon BC560-C is a PNP BJT transistor with max IC of 0.1A and hFE of 420, ideal for switching applications. With a max power dissipation of 0.625W and fT of 250MHz, it operates at up to 150°C making it suitable for various electronic designs.

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.133

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$0.133

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American Microsemiconductor Inc.

USA . 7,791 parts In-Stock

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$8.250

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$8.250

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Chip Stock

USA . 42,000 parts In-Stock

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Partservice

France . 9,000 parts In-Stock

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$0.098

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$0.015

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$0.098

$0.015

ComSIT USA

USA . 7,000 parts In-Stock

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Digiode

USA . 6,450 parts In-Stock

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VNN

France . 6,149 parts In-Stock

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Micros

Poland . 6,000 parts In-Stock

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$0.100

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$0.020

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ComSIT Distribution GmbH

Germany . 5,250 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 5,123 parts In-Stock

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Anansix

USA . 3,787 parts In-Stock

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Rebound Electronics

UK . 3,470 parts In-Stock

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SPM Sales

USA . 2,000 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1,002 parts In-Stock

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ECAB

Sweden . 491 parts In-Stock

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491

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Prism Electronics

USA . 340 parts In-Stock

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340

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Vyrian

USA . 304 parts In-Stock

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LittleDiode

UK . 235 parts In-Stock

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Huijzer Components

Netherlands . 200 parts In-Stock

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200

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J2 Sourcing AB

Sweden . 106 parts In-Stock

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Holdelec - ElecDif-Pro

France . 93 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Donberg Electronics Ltd

Ireland . 20 parts In-Stock

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GES GmbH

Germany . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 86 parts In-Stock

1+ parts

$0.096

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86

$0.096

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Aranea Global

USA . 1,000 parts In-Stock

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$0.130

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$0.125

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1,000

$0.130

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$0.125

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.133

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$0.126

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$0.124

2,000

$0.133

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$0.126

$0.124

Argo Parts USA

USA . 519 parts In-Stock

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$0.133

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$0.129

519

$0.133

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$0.129

Continental Prestige Electronics

USA . 480 parts In-Stock

1+ parts

$0.133

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$0.130

480

$0.133

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$0.130

Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.136

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$0.136

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$0.136

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60

$0.136

$0.136

$0.136

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Aztec Data Supply Inc.

USA . 3,068 parts In-Stock

1+ parts

$0.785

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3,068

$0.785

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Modulus Dynamics

Lithuania . 23,129 parts In-Stock

1+ parts

$1.054

100+ parts

$1.012

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$0.970

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23,129

$1.054

$1.012

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One Stop Electronics

USA . 199 parts In-Stock

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$3.050

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199

$3.050

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AZTECH Wire

Italy . 695 parts In-Stock

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$14.186

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695

$14.186

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Semicontronic

India . 266 parts In-Stock

1+ parts

$17.050

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$16.624

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$16.538

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266

$17.050

$16.624

$16.538

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Ampacity Inc.

Singapore . 1,509 parts In-Stock

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$63.050

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Metaverse IC Inc.

Canada . 17,573 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,043 parts In-Stock

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Problanco Electronics

Mexico . 6,060 parts In-Stock

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SupplyDigital Components

Austria . 5,994 parts In-Stock

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TANS Electronics

Latvia . 5,985 parts In-Stock

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Kulean Microsystems

USA . 5,625 parts In-Stock

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Corphita

USA . 4,422 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,000 parts In-Stock

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Computer Components Inc. - USA

USA . 1,800 parts In-Stock

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Supply Digital

USA . 622 parts In-Stock

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622

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Assy Fe

Spain . 569 parts In-Stock

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569

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Perfect Parts

USA . 381 parts In-Stock

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381

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UNI Independent Distributors

Spain . 370 parts In-Stock

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Glotronic Ltd.

UK . 24 parts In-Stock

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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Overview

Unlock the power of innovative technology with the BC560-C by Infineon Technologies. This Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and reliability, making it the perfect choice for switching applications. With a maximum power dissipation of 0.625W and a minimum DC current gain of 420, this PNP transistor delivers superior performance in a compact package. Trust Infineon Technologies to provide cutting-edge solutions that meet your needs with precision and efficiency. Experience the value and benefits of the BC560-C today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor, making it suitable for various operating environments.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits.

Configuration: SINGLE

Simplified design and integration compared to multiple transistor configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Package Shape: ROUND

Space-saving design and ease of mounting in circular layouts.

Terminal Form: THROUGH-HOLE

Provides secure connections and ease of soldering for through-hole PCB mounting.

No. of Terminals: 3

Simple and efficient interface with external circuits.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling moderate power dissipation, suitable for a range of applications.

Package Style (Meter): CYLINDRICAL

Enhances the overall aesthetics and ease of assembly in cylindrical packages.

Minimum DC Current Gain (hFE): 420

Provides high current gain ensuring amplification in various circuit designs.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures without compromising performance.

Transistor Element Material: SILICON

Offers high reliability and performance characteristics compared to other element materials.

Maximum Collector Current (IC): 0.1 A

Suitable for applications requiring low to moderate collector current.

Terminal Position: BOTTOM

Simplifies PCB layout and connection arrangement.

Nominal Transition Frequency (fT): 250 MHz

Suitable for high-frequency applications where fast switching transitions are required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC560-C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC560-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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