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BC560C

Onsemi

BC560C by Onsemi

BC560C by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 380, and VCE of 45V. This through-hole transistor operates up to 150°C and offers a transition frequency of 250MHz in a cylindrical package.

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

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Nova Conductors

Japan . 600 parts In-Stock

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$0.133

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American Microsemiconductor Inc.

USA . 7,791 parts In-Stock

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$8.250

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Chip Stock

USA . 42,000 parts In-Stock

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Partservice

France . 9,000 parts In-Stock

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$0.098

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ComSIT USA

USA . 7,000 parts In-Stock

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Digiode

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VNN

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Micros

Poland . 6,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,250 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 5,123 parts In-Stock

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Anansix

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Rebound Electronics

UK . 3,470 parts In-Stock

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SPM Sales

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Fibra_Brandt Electronic GMBH

Germany . 1,002 parts In-Stock

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ECAB

Sweden . 491 parts In-Stock

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Prism Electronics

USA . 340 parts In-Stock

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Vyrian

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LittleDiode

UK . 235 parts In-Stock

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Huijzer Components

Netherlands . 200 parts In-Stock

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J2 Sourcing AB

Sweden . 106 parts In-Stock

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Holdelec - ElecDif-Pro

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Donberg Electronics Ltd

Ireland . 20 parts In-Stock

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GES GmbH

Germany . 9 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 86 parts In-Stock

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$0.096

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$0.096

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Aranea Global

USA . 1,000 parts In-Stock

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$0.130

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$0.125

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$0.130

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Netroflash

USA . 2,000 parts In-Stock

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$0.133

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$0.126

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Argo Parts USA

USA . 519 parts In-Stock

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519

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Continental Prestige Electronics

USA . 480 parts In-Stock

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$0.133

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480

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.136

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Aztec Data Supply Inc.

USA . 3,068 parts In-Stock

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$0.785

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Modulus Dynamics

Lithuania . 23,129 parts In-Stock

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$1.054

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$1.012

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$0.970

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One Stop Electronics

USA . 199 parts In-Stock

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$3.050

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AZTECH Wire

Italy . 695 parts In-Stock

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$14.186

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Semicontronic

India . 266 parts In-Stock

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$17.050

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$16.624

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$16.538

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Ampacity Inc.

Singapore . 1,509 parts In-Stock

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$63.050

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Metaverse IC Inc.

Canada . 17,573 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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SupplyDigital Components

Austria . 5,994 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Corphita

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Cyclops Electronics Ltd (Excess)

UK . 2,000 parts In-Stock

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Computer Components Inc. - USA

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Supply Digital

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Assy Fe

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Perfect Parts

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UNI Independent Distributors

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Glotronic Ltd.

UK . 24 parts In-Stock

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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Overview

Unleash the power of innovation with the BC560C by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for amplifier applications. Manufactured by industry leader Onsemi, this PNP transistor offers superior performance and reliability. With a minimum DC current gain of 380 and a maximum collector-emitter voltage of 45V, this transistor provides unmatched value and benefits to customers. Upgrade your electronic projects with the BC560C and experience enhanced functionality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring its longevity and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuit designs and simplifies the overall setup.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and positioning in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 380

High minimum DC current gain ensures stable and consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring up to 45 V collector-emitter voltage.

Transistor Element Material: SILICON

Silicon material provides good electrical performance and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents up to 0.1 A, making it suitable for low to moderate current applications.

Terminal Finish: TIN LEAD

Tin-lead finish ensures good solderability and reliability of connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easier PCB layout and routing of connections.

Peak Reflow Temperature °C: 235

Can withstand peak reflow temperatures of up to 235°C during assembly processes.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency enables fast switching and high-frequency operation in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC560C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

380

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC560C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-327-7816, 5961123277816, 5961-14-462-2011, 5961144622011

NIIN

123277816, 144622011

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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