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BC560CTA

Onsemi

BC560CTA by Onsemi

BC560CTA by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 420, and max. collector-emitter voltage of 45V. Ideal for switching applications due to its single configuration and cylindrical package style with through-hole terminals.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

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$0.051

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$0.047

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$0.044

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150

$0.051

$0.047

$0.044

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Flip Electronics (Authorized)

USA . 52,874 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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$0.044

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100

$0.044

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Digiode

USA . 993 parts In-Stock

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$0.048

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993

$0.048

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Flip Electronics

USA . 57,874 parts In-Stock

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$0.200

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Chip Stock

USA . 109,062 parts In-Stock

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DigiKey Marketplace

USA . 57,874 parts In-Stock

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Vyrian

USA . 36,704 parts In-Stock

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VNN

France . 2,459 parts In-Stock

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Cogito LLC

Ukraine . 2,000 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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$0.042

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297

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Semicontronic

India . 36,934 parts In-Stock

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$0.043

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$0.042

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$0.042

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36,934

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Ampacity Inc.

Singapore . 36,743 parts In-Stock

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$0.043

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Aranea Global

USA . 500 parts In-Stock

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$0.043

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$0.041

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Argo Parts USA

USA . 4,907 parts In-Stock

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$0.044

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Continental Prestige Electronics

USA . 1,310 parts In-Stock

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1,310

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Corphita

USA . 1,689 parts In-Stock

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$0.046

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1,689

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$0.051

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$0.047

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$0.044

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150

$0.051

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$0.044

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Aztec Data Supply Inc.

USA . 1,597 parts In-Stock

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$1.480

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$1.480

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Component Stockers USA

USA . 770 parts In-Stock

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$99.990

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 7,017 parts In-Stock

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Kulean Microsystems

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Kepictronics

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 4,600 parts In-Stock

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SupplyDigital Components

Austria . 1,190 parts In-Stock

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Problanco Electronics

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Supply Digital

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UHIMA Technologies

Türkiye . 223 parts In-Stock

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Overview

Enhance your electronic projects with the BC560CTA by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor is ideal for switching applications, offering a maximum collector-emitter voltage of 45V and a minimum DC current gain of 420. Its compact cylindrical package shape and through-hole terminal form make it easy to integrate into your designs. Trust Onsemi's reputation for excellence and innovation, and experience the value and reliability that the BC560CTA brings to your projects. Upgrade your creations with the efficiency and performance of this versatile transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor ideal for those purposes.

Configuration: SINGLE

Simplified design and easier to work with in circuits that require only one transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in those scenarios.

Maximum Power Dissipation (Abs): 0.625 W

Can handle a relatively high power dissipation, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 45 V

Can handle high voltages, expanding the range of applications where this transistor can be used.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds, important in many switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC560CTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC560CTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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