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BC560CZL1

Onsemi

BC560CZL1 by Onsemi

BC560CZL1 by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 380, and max. power dissipation of 0.625W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 45V and operates up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Zilex Electronics Inc.

Canada . 4,000 parts In-Stock

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VNN

France . 2,767 parts In-Stock

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Vyrian

USA . 356 parts In-Stock

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356

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Digiode

USA . 329 parts In-Stock

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329

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 242 parts In-Stock

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$1.678

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242

$1.678

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AZTECH Wire

Italy . 356 parts In-Stock

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$5.527

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356

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Ampacity Inc.

Singapore . 670 parts In-Stock

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$10.050

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670

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Problanco Electronics

Mexico . 6,068 parts In-Stock

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TANS Electronics

Latvia . 4,224 parts In-Stock

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Argo Parts USA

USA . 3,840 parts In-Stock

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Kulean Microsystems

USA . 3,805 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,079 parts In-Stock

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SupplyDigital Components

Austria . 734 parts In-Stock

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UHIMA Technologies

Türkiye . 623 parts In-Stock

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Continental Prestige Electronics

USA . 276 parts In-Stock

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Enhance your electronic projects with the BC560CZL1 by Onsemi! Manufactured by a trusted industry leader, this small signal bipolar junction transistor offers reliable performance and versatility. Ideal for amplifier applications, this PNP transistor boasts a high DC current gain of 380, ensuring optimal signal amplification. With a maximum collector-emitter voltage of 45V and a peak reflow temperature of 235°C, this transistor delivers exceptional power dissipation capabilities. Upgrade your designs with the BC560CZL1 and experience the quality and value that Onsemi products bring to your projects.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides good durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type

PNP - This configuration allows for efficient current flow in one direction, making it ideal for amplification purposes.

Configuration

SINGLE - The single configuration simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application

AMPLIFIER - Designed specifically for amplification tasks, this transistor is perfect for use in audio equipment and signal processing devices.

Package Shape

ROUND - The round shape of the package allows for easy mounting and positioning within a circuit layout.

Terminal Form

THROUGH-HOLE - Through-hole terminals provide a secure connection to the circuit board, minimizing the risk of disconnection or failure.

No. of Terminals

3 - With three terminals, this transistor offers the necessary connections for effective signal amplification and processing.

Maximum Power Dissipation (Abs)

0.625 W - This high power dissipation rating ensures reliable performance under heavy loads.

Package Style (Meter)

CYLINDRICAL - The cylindrical package style offers a compact and space-efficient design for easy installation in tight spaces.

Minimum DC Current Gain (hFE)

380 - A high minimum DC current gain ensures consistent and reliable amplification of input signals.

Maximum Operating Temperature

150 °C - With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage

45 V - The high collector-emitter voltage rating allows for the handling of larger voltage signals with ease.

Transistor Element Material

SILICON - Silicon is a widely-used semiconductor material known for its reliability and stable performance characteristics.

Maximum Collector Current (IC)

0.1 A - The high collector current rating enables the transistor to handle larger current loads without overheating or failure.

Terminal Finish

TIN LEAD - The tin lead terminal finish provides a reliable and corrosion-resistant connection for long-term use.

Terminal Position

BOTTOM - The bottom terminal position makes it easy to mount and solder the transistor onto a circuit board.

Peak Reflow Temperature °C

235 - With a high peak reflow temperature, this transistor can withstand the soldering process without damage.

Nominal Transition Frequency (fT)

250 MHz - The high nominal transition frequency allows for fast signal processing and response times in amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC560CZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

380

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC560CZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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