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BC560CT&A

Continental Device India

BC560CT&A by Continental Device India

BC560CT&A by Continental Device India is a PNP BJT transistor with hFE of 420, IC of 0.1A, and fT of 150MHz. Ideal for switching applications due to its max VCE of 45V and power dissipation of 0.625W in a cylindrical package. Suitable for through-hole mounting with matte tin finish.

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$0.044

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Overview

Unlock the power of innovation with the BC560CT&A by Continental Device India, a top-quality small signal bipolar junction transistor that offers unparalleled performance and reliability. Designed for switching applications, this PNP transistor features a single configuration and a high DC current gain of 420, ensuring optimal efficiency. With a maximum power dissipation of 0.625W and a maximum collector-emitter voltage of 45V, this transistor is perfect for a wide range of electronic projects. Trust in Continental Device India's expertise and enhance your designs with the BC560CT&A today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy allows for a lightweight and durable package, making it suitable for applications where portability and longevity are important.

Polarity or Channel Type: PNP

PNP transistors can be used in complementary configurations with NPN transistors, providing versatile options in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in tasks such as turning on/off electrical circuits.

Package Shape: ROUND

The round package shape offers efficient heat dissipation and ease of mounting, enhancing the overall performance of the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, making installation and replacement convenient.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 420

The high minimum DC current gain ensures stable and reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in elevated temperature environments, expanding the range of applications.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides added protection against voltage spikes, increasing the durability of the transistor.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability, making them a popular choice for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for handling moderate current levels, suitable for various switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and corrosion resistance, improving the reliability and longevity of the connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and integration, making it easier to design compact and efficient circuits.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz enables high-speed switching and amplification, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC560CT&A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC560CT&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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