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BC547ARL1G

Onsemi

BC547ARL1G by Onsemi

BC547ARL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a min. DC current gain of 110, ideal for amplifier applications due to its high transition frequency of 300MHz and max. power dissipation of 0.625W in a cylindrical package style.

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1k+

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Vyrian

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Native Components

USA . 986 parts In-Stock

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Northwest PG Solutions

USA . 1,467 parts In-Stock

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$0.069

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Advanced Electronics

New Zealand . 4,393 parts In-Stock

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$2.172

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AZTECH Wire

Italy . 414 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,244 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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TANS Electronics

Latvia . 1,455 parts In-Stock

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SupplyDigital Components

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Overview

Enhance your electronic projects with the BC547ARL1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifier applications. Manufactured by Onsemi, known for their superior technology and reliability, this NPN transistor offers a DC current gain of 110 and a maximum operating temperature of 150 °C. With a maximum collector-emitter voltage of 45V and a peak reflow temperature of 260°C, this transistor provides excellent performance and durability. Upgrade your circuits with the BC547ARL1G and experience enhanced functionality and efficiency in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate into various electronic projects.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high maximum power dissipation, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 110

A high DC current gain ensures efficient amplification and signal processing in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in harsh environments.

Maximum Collector-Emitter Voltage: 45 V

This voltage rating ensures safe operation in circuits with varying voltage levels.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels without damage.

Nominal Transition Frequency (fT): 300 MHz

A high transition frequency allows for faster switching and signal processing, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547ARL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC547ARL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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