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BC550CG

Onsemi

BC550CG by Onsemi

BC550CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 420 and can handle a max collector current of 0.1A. With a max operating temperature of 150°C and a collector-emitter voltage of 45V, it is suitable for various electronic projects.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 189 parts In-Stock

1+ parts

$0.091

100+ parts

$0.086

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$0.077

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189

$0.091

$0.086

$0.077

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Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

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$0.069

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650

$0.069

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Digiode

USA . 199 parts In-Stock

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$0.086

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199

$0.086

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Chip Stock

USA . 5,654 parts In-Stock

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Vyrian

USA . 5,038 parts In-Stock

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VNN

France . 2,530 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,434 parts In-Stock

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J2 Sourcing AB

Sweden . 1,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 353 parts In-Stock

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353

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ComSIT USA

USA . 353 parts In-Stock

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353

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Prism Electronics

USA . 150 parts In-Stock

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150

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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Ashlea Components Ltd

UK . 79 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 485 parts In-Stock

1+ parts

$0.067

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485

$0.067

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Continental Prestige Electronics

USA . 3,242 parts In-Stock

1+ parts

$0.069

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$0.068

3,242

$0.069

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$0.068

Argo Parts USA

USA . 1,759 parts In-Stock

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$0.069

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$0.067

1,759

$0.069

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$0.067

Ampacity Inc.

Singapore . 189 parts In-Stock

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$0.077

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189

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Corphita

USA . 178 parts In-Stock

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$0.082

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178

$0.082

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Aztec Data Supply Inc.

USA . 4,456 parts In-Stock

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$1.310

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4,456

$1.310

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AZTECH Wire

Italy . 260 parts In-Stock

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$5.754

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260

$5.754

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Perfect Parts

USA . 30,246 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kepictronics

USA . 10,758 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,371 parts In-Stock

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Problanco Electronics

Mexico . 7,248 parts In-Stock

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Kulean Microsystems

USA . 7,163 parts In-Stock

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SupplyDigital Components

Austria . 6,288 parts In-Stock

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TANS Electronics

Latvia . 5,462 parts In-Stock

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Assy Fe

Spain . 4,452 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.068

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$0.066

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$0.065

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$0.068

$0.066

$0.065

UHIMA Technologies

Türkiye . 847 parts In-Stock

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GreenTree Electronics

Israel . 500 parts In-Stock

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500

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Overview

Unleash the power of innovation with the BC550CG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that guarantees superior performance in amplifier applications. Manufactured by the renowned Onsemi, this NPN transistor boasts a single configuration and a minimum DC current gain of 420, offering customers unmatched reliability and efficiency. With a maximum power dissipation of 1.5W and a maximum operating temperature of 150°C, the BC550CG is the perfect choice for your electronic projects. Experience cutting-edge technology and seamless functionality with this groundbreaking product!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

Suitable for amplification applications and commonly used in signal processing circuits.

Package Shape: ROUND

Compact design makes it easy to mount in various applications.

Maximum Power Dissipation (Abs): 1.5 W

Can handle higher power levels without overheating, improving overall performance and reliability.

Minimum DC Current Gain (hFE): 420

High DC current gain allows for efficient amplification of signals.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications where higher voltage tolerances are required.

Nominal Transition Frequency (fT): 250 MHz

Capable of operating at high frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC550CG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC550CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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