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BC212BG

Onsemi

BC212BG by Onsemi

BC212BG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1W, and hFE of 60. Ideal for amplifier applications, it has a max operating temp of 150 °C and VCE of 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 12,113 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 5,057 parts In-Stock

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Digiode

USA . 345 parts In-Stock

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Native Components

USA . 454 parts In-Stock

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$0.076

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$0.073

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$0.073

Northwest PG Solutions

USA . 2,208 parts In-Stock

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$0.083

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$0.073

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AZTECH Wire

Italy . 59 parts In-Stock

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$16.530

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Problanco Electronics

Mexico . 6,413 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,484 parts In-Stock

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Kulean Microsystems

USA . 4,147 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,656 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,877 parts In-Stock

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SupplyDigital Components

Austria . 1,836 parts In-Stock

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UHIMA Technologies

Türkiye . 888 parts In-Stock

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Corphita

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Corohmni

South Africa . 367 parts In-Stock

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Overview

Looking for a reliable small signal bipolar junction transistor (BJT) for your amplifier applications? Look no further than the BC212BG by Onsemi. Known for their high-quality products, Onsemi delivers top-notch performance and durability. With a maximum power dissipation of 1W and a minimum DC current gain of 60, this PNP transistor offers great value and benefits to customers. Trust in Onsemi's expertise and choose the BC212BG for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for better reliability and ease of handling.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are needed, ensuring compatibility with existing circuit designs.

Configuration: SINGLE

Simplified design with single transistor configuration for ease of use and troubleshooting.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum Power Dissipation (Abs): 1 W

Capable of handling high power dissipation for reliable operation under varying load conditions.

Maximum Collector-Emitter Voltage: 50 V

Provides a high voltage rating for the collector-emitter junction, suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures efficient amplification of signals with minimal input power.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without degradation, suitable for demanding environments.

Nominal Transition Frequency (fT): 280 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC212BG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC212BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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